IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
600
RDS(on) ()
VGS = 10 V
0.27
Qg (Max.) (nC)
150
Qgs (nC)
46
Qgd (nC)
64
Configuration
• Lower Gate Charge Results in Simple Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
Single
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Zero Voltage Switching SMPS
G
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
S
• Motor Control Applications
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFP21N60LPbF
SiHFP21N60L-E3
IRFP21N60L
SiHFP21N60L
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
21
13
A
IDM
84
2.6
W/°C
Single Pulse Avalanche Energyb
EAS
420
mJ
Repetitive Avalanche Currenta
IAR
21
A
Repetitive Avalanche Energya
EAR
33
mJ
Linear Derating Factor
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
330
W
dV/dt
16
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a).
c. ISD 21 A, dI/dt 530 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthCS
RthJC
0.24
-
40
0.38
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
420
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
RDS(on)
Forward Transconductance
gfs
VDS = 600 V, VGS = 0 V
-
-
50
μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
2.0
mA
-
0.27
0.32
VDS = 50 V, ID = 13 A
11
-
-
S
ID = 13 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
4000
-
Output Capacitance
Coss
VDS = 25 V,
-
340
-
f = 1.0 MHz, see fig. 5
-
29
-
-
170
-
-
130
-
-
-
150
-
-
46
-
-
64
-
0.63
-
-
20
-
-
58
-
-
33
-
-
10
-
-
-
21
-
-
84
Reverse Transfer Capacitance
Crss
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
(Energy Related)
Coss eff. (ER)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V,
VDS = 0 V to 480 Vc
Rg
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 21 A, VDS = 480 V
see fig. 7 and 15b
f = 1 MHz, open drain
VDD = 300 V, ID = 21 A,
Rg = 1.3 , VGS = 10 V,
see fig. 11a and 11bb
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Time
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 21 A, VGS = 0 Vb
-
-
1.5
TJ = 25 °C, IF = 21 A
-
160
240
TJ = 125 °C, dI/dt = 100 A/μsb
-
400
610
TJ = 25 °C, IF = 21 A, VGS = 0 Vb
-
480
730
TJ = 125 °C, dI/dt = 100 A/μsb
-
1540
2310
TJ = 25 °C
-
5.3
7.9
V
ns
nC
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
1000
10
BOTTOM
ID, Drain-to-Source Current (Α )
ID, Drain-to-Source Current (A)
TOP
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
5.5V
0.01
100
T J = 150°C
10
1
T J = 25°C
0.1
VDS = 50V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
0.001
0.01
0.1
1
10
100
1000
4
VDS, Drain-to-Source Voltage (V)
8
10
12
14
16
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
3.0
BOTTOM
5.5V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
0.01
ID = 21A
2.5
VGS = 10V
2.0
(Normalized)
10
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
RDS(on) , Drain-to-Source On Resistance
TOP
ID, Drain-to-Source Current (A)
6
1.5
1.0
0.5
0.0
0.1
1
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
12.0
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
VGS , Gate-to-Source Voltage (V)
Crss = Cgd
Coss = Cds + Cgd
10000
C, Capacitance(pF)
ID= 21A
Ciss
1000
Coss
100
Crss
VDS= 120V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
1000
20
VDS, Drain-to-Source Voltage (V)
40
60
80
100
120
Q G Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
Fig. 7 - Typical Gate Charge vs. Gate-to-Source
Voltage
100.00
ISD, Reverse Drain Current (A)
20
Energy (µJ)
VDS= 480V
VDS= 300V
10.0
15
10
5
T J = 150°C
10.00
T J = 25°C
1.00
VGS = 0V
0
0.10
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
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4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
RD
VDS
100
VGS
D.U.T.
RG
10
100µsec
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
Fig. 11a - Switching Time Test Circuit
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
25
VDS
90 %
ID, Drain Current (A)
20
10 %
VGS
15
td(on)
td(off) tf
tr
10
Fig. 11b - Switching Time Waveforms
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P DM
t1
0.001
t2
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t1/ t 2
J = P DM x Z thJC
+T C
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
5.0
VDS
VGS(th) Gate threshold Voltage (V)
tp
4.0
ID = 250µA
3.0
IAS
Fig. 14c - Unclamped Inductive Waveforms
2.0
Current regulator
Same type as D.U.T.
1.0
-75
-50
-25
0
25
50
75
100
125
150
50 kΩ
12 V
T J , Temperature ( °C )
0.2 µF
0.3 µF
+
Fig. 13 - Threshold Voltage vs. Temperature
D.U.T.
EAS , Single Pulse Avalanche Energy (mJ)
800
600
VDS
VGS
ID
TOP
9.4A
13A
BOTTOM 21A
700
-
3 mA
IG
ID
Current sampling resistors
500
Fig. 15a - Gate Charge Test Circuit
400
300
200
QG
VGS
100
QGS
0
25
50
75
100
125
QGD
150
Starting T J , Junction Temperature (°C)
VG
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Charge
Fig. 15b - Basic Gate Charge Waveform
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
A
- VDD
A
0.01 Ω
Fig. 14b - Unclamped Inductive Test Circuit
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Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91206.
Document Number: 91206
S11-0446-Rev. C, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
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