LVB2560-M3/45

LVB2560 www.vishay.com Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction ~ ~ • Low forward voltage drop ~ ~ • High surge current capability Case Style GSIB-5S • High case dielectric strength of 2500 VRMS, 1 minute • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for telecom power supply, high efficiency desktop PC and server SMPS. PRIMARY CHARACTERISTICS IF(AV) 25 A VRRM 600 V IFSM 550 A IR 10 μA VF at IF = 12.5 A, TA = 125 °C 0.76 V TJ max. 150 °C Package GSIB-5S Circuit configuration In-line MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at LVB2560 UNIT VRRM 600 V TC = 105 °C IO (1) 25 TA = 25 °C IO (2) 3.6 IFSM 550 A I2t 1255 A2s TJ, TSTG -55 to +150 °C Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) SYMBOL TJ = 25 °C Operating junction and storage temperature range A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 21-Jun-2022 Document Number: 89393 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LVB2560 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C VF (1) Instantaneous forward voltage IF = 12.5 A Reverse current per diode VR = 600 V Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C TA = 25 °C MAX. 0.89 0.92 0.76 - UNIT V 0.2 10 140 - trr 1.8 - μs CJ 330 - pF IR (2) TA = 125 °C TYP. μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL LVB2560 RθJA (2) 25 RθJC (1) 1.0 UNIT °C/W Notes (1) With heatsink (2) Without heatsink, free air EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 Ω, TA = 25 °C (1) VPEAK - VALUE 6 kV maximum Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 Ω, 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N LVB2560-M3/45 UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 7.1 45 20 Tube Revision: 21-Jun-2022 Document Number: 89393 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LVB2560 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Output Current (A) 30 With Heatsink, Sine-Wave, R-Load 25 20 15 TC Measurement 10 5 40 60 80 100 120 140 160 TA = 25 °C TA = 100 °C 0.3 0.4 0.5 0.6 0.7 0.8 1 1.1 Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 4 - Typical Forward Characteristics Per Diode 1000 5 4 3 2 1 Without Heatsink Sine-wave, R-Load, Free Air, TA TA = 150 °C 100 TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 0 0 25 50 75 100 125 10 150 Ambient Temperature (°C) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 2 - Forward Current Derating Curve 1000 TJ = 25 °C f = 1 MHz Vstg = 50 mVP-P 50 Junction Capacitance (pF) 45 Forward Power Dissipation (W) 0.9 Temperature (°C) Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) 20 TA = 125 °C 1 0.1 0.2 0 0 TA = 150 °C 10 40 35 30 25 20 15 100 10 10 5 1 0.1 0 0 5 10 15 20 25 1 10 100 Reverse Voltage (V) Average Forward Current ( A ) Fig. 6 - Typical Junction Capacitance Per Diode Fig. 3 - Forward Power Dissipation Revision: 21-Jun-2022 Document Number: 89393 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LVB2560 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 Revision: 21-Jun-2022 Document Number: 89393 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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