MBRB20100CT-E3/8W

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS® TO-220AB • Trench MOS Schottky technology ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 MBR2090CT MBR20100CT 3 MBRF2090CT MBRF20100CT 1 PIN 1 PIN 2 PIN 3 CASE PIN 1 1 2 3 PIN 2 PIN 3 D2PAK (TO-263AB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K TYPICAL APPLICATIONS 2 1 MBRB2090CT MBRB20100CT PIN 1 PIN 2 DESIGN SUPPORT TOOLS K HEATSINK click logo to get started MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package Circuit configuration For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. 2 x 10 A 90 V to 100 V 150 A 0.65 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB) Common cathode per Polarity: as marked Mounting Torque: 10 in-lbs maximum                     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL MBR2090CT MBR20100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V PARAMETER Maximum average forward rectified current at TC = 133 °C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) 20 10 A IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 130 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range VAC 1500 V TJ, TSTG -65 to +150 °C Revision: 11-Jun-18 Document Number: 89033 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage  per diode SYMBOL IF = 10 A TC = 25 °C IF = 10 A TC = 125 °C IF = 20 A TC = 125 °C UNIT 0.80 VF (1) V 0.65 0.75 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage MAX. IR (2) TJ = 125 °C 100 µA 6.0 mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB RJA 60 - 60 RJC 2.0 3.5 2.0 Typical thermal resistance per diode °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20100CT-E3/4W 1.88 4W 50/tube Tube ITO-220AB MBRF20100CT-E3/4W 1.75 4W 50/tube Tube TO-263AB MBRB20100CT-E3/4W 1.38 4W 50/tube Tube TO-263AB MBRB20100CT-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 160 MBRF 16 MBR & MBRB Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 12 8 4 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 0 50 100 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 150 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 11-Jun-18 Document Number: 89033 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 1 MBR(B) 0.1 0.01 1.0 0.1 1 100 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 100 10 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 0.1 0.01 MBRF 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1 MHz Vsig = 50 mVp-p 1000 100 10 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 11-Jun-18 Document Number: 89033 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 11-Jun-18 Document Number: 89033 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 11-Jun-18 Document Number: 89033 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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