MBRB2090CT-M3, MBRB20100CT-M3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
D2PAK (TO-263AB)
• Trench MOS Schottky technology
K
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
• High frequency operation
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEATSINK
DESIGN SUPPORT TOOLS
TYPICAL APPLICATIONS
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For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
Models
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Common cathode
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB2090CT
MBRB20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IF(AV)
20
10
A
150
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +150
°C
MAX.
UNIT
IFSM
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
per diode (1)
TEST CONDITIONS
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 125 °C
Maximum reverse current per diode at
working peak reverse voltage (2)
TJ = 25 °C
TJ = 125 °C
SYMBOL
0.80
VF
0.65
V
0.75
IR
100
μA
6.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 03-Jul-2018
Document Number: 87980
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB2090CT-M3, MBRB20100CT-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB
RJA
60
RJC
2.0
Typical thermal resistance per diode
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
MBRB20100CT-M3/4W
PREFERRED P/N
1.38
4W
50/tube
DELIVERY MODE
Tube
TO-263AB
MBRb20100CT-M3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
100
Instantaneous Forward Current (A)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
0
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
50
100
150
0
0.1
Case Temperature (°C)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 1 - Forward Current Derating Curve
160
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
0.2
Instantaneous Forward Voltage (V)
140
120
100
80
60
40
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Per Diode
Revision: 03-Jul-2018
Document Number: 87980
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB2090CT-M3, MBRB20100CT-M3
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
10
1
0.1
0.01
10
1
Junction to Case
100
0.1
1
100
10
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 03-Jul-2018
Document Number: 87980
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000