SI1036X-T1-GE3

Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.540 at VGS = 4.5 V 0.5 0.600 at VGS = 2.5 V 0.2 0.700 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (TYP.) 0.72 nC D1 6 TrenchFET® Power MOSFET 100 % Rg tested Gate-source ESD protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS SC-89 Dual (6 leads) G2 5 • • • • • • • • S2 4 Load switch High speed switching DC/DC converters / boost converters For smart phones, tablet PCs and mobile computing D2 D1 1 S1 Top View 2 G1 3 D2 G2 G1 Marking Code: B Ordering Information: Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 S1 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 30 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation a TA = 25 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range UNIT V 0.61 a,b ID 0.49 a,b IDM 2 IS 0.18 a,b 0.22 PD A A a,b W 0.14 a,b TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b SYMBOL t5s Steady State RthJA TYP. MAX. 470 565 560 675 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. S14-0147-Rev. A, 27-Jan-14 Document Number: 62932 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1036X www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - - V 29 - - -1.8 - Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 μA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.4 - 1 VDS = 0 V, VGS = ± 8 V - - ± 30 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance RDS(on) gfs VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C - - 3 VDS =  5 V, VGS = 4.5 V 2 - - VGS = 4.5 V, ID = 0.5 A - 0.450 0.540 VGS = 2.5 V, ID = 0.2 A - 0.500 0.600 VGS = 1.8 V, ID = 0.2 A - 0.560 0.700 VGS = 1.5 V, ID = 0.05 A - 0.647 1.100 VDS = 15 V, ID = 0.5 A - 7.5 - - 36 - - 9 - - 5 - mV/°C V μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 8 V, ID = 0.5 A - 1.2 2 - 0.72 1.2 VDS = 15 V, VGS = 4.5 V, ID = 0.5 A - 0.1 - - 0.16 - f = 1 MHz 2.4 12.2 24.4 - 6 15 - 13 24 - 20 30 - 11 20 td(on) tr td(off) VDD = 15 V, RL = 37.5  ID  0.4 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = 0.5 A IF = 0.4 A, dI/dt = 100 A/μs - - 2 - 0.8 1.2 A V - 8 15 ns - 2 4 nC - 4 - - 4 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0147-Rev. A, 27-Jan-14 Document Number: 62932 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1036X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-3 0.020 TJ = 25 °C IGSS - Gate Current (A) IGSS - Gate Current (mA) 10-4 0.015 0.010 0.005 10-5 TJ = 150 °C -6 10 10-7 TJ = 25 °C 10-8 0.000 0 3 6 9 12 10-9 15 0 3 VGS - Gate-Source Voltage (V) 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 0.5 2 VGS = 5V thru 2V VGS = 1.8 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.5 0.3 TC = 25 °C 0.2 TC = 125 °C 0.1 VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 0 2 0.5 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1 60 0.8 45 VGS = 1.8 V VGS = 1.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1 VGS = 2.5 V 0.6 VGS = 4.5 V 0.4 Ciss 30 15 Coss Crss 0.2 0 0 0.5 1 1.5 ID - Drain Current (A) On-Resistance vs. Drain Current S14-0147-Rev. A, 27-Jan-14 2 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62932 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1036X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 8 VDS = 8 V VGS = 4.5 V, 2.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID =0.5 A 6 VDS = 15 V 4 VDS = 24 V 2 1.5 VGS = 1.8 V, 1.5 V 1.2 0.9 0.6 0 0 0.3 0.6 0.9 1.2 - 50 1.5 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1.0 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 0.8 TJ = 125 °C 0.6 TJ = 25 °C 0.4 0.2 0.1 0 0.35 0.7 1.05 0 1.4 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.68 2 On-Resistance vs. Gate-to-Source Voltage 2.7 ID = 250 μA 2.25 0.58 Power (W) VGS(th) (V) 1.8 0.48 1.35 0.9 0.38 0.45 0.28 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S14-0147-Rev. A, 27-Jan-14 100 125 150 0 0.01 0.1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient Document Number: 62932 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1036X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.25 0.2 Limited by RDS(on)* 1 100 μs 1 ms 0.1 Power (W) ID - Drain Current (A) Limited by IDM 10 ms 100 ms 0.01 1s DC, 10 s 0.15 0.1 0.05 TA = 25 °C BVDSS Limited 0.001 0 0.1 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62932. S14-0147-Rev. A, 27-Jan-14 Document Number: 62932 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000