SI1028X-T1-GE3

Si1028X Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A) 0.650 at VGS = 10 V 0.48 0.770 at VGS = 4.5 V 0.45 Qg (Typ.) 0.5 • TrenchFET® Power MOSFET • ESD Protected: 550 V Typical HBM • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Small Board Area APPLICATIONS • Load/Signal Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems SC-89 1 G1 2 D2 3 6 5 4 D1 Marking Code G G2 XX YY S1 Lot Traceability and Date Code S2 Part # Code Top View Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C IDM IS PD Unit V 0.48a, b 0.45a, b 1 ID TJ, Tstg Operating Junction and Storage Temperature Range Limit 30 ± 20 A 0.18a, b 0.22a, b 0.14a, b - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambientb Steady State RthJA Typ. Max. 470 565 560 675 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1028X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage IDSS Zero Gate Voltage Drain Current a ID(on) On-State Drain Current Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductance 33 ID = 250 µA VDS = VGS, ID = 250 µA V mV/°C - 2.8 1 2.5 VDS = 0 V, VGS = ± 20 V ± 20 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 10 V V µA 10 1 A VGS = 10 V, ID = 0.5 A 0.540 0.650 VGS = 4.5 V, ID = 0.2 A 0.640 0.770 VDS = 10 V, ID = 0.5 A 1  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 16 VDS = 15 V, VGS = 0 V, f = 1 MHz 8 VDS = 15 V, VGS = 10 V, ID = 0.5 A 1 2 0.5 1 4 VDS = 15 V, VGS = 4.5 V, ID = 0.5 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 50 8 16 VDD = 15 V, RL = 37.5  ID  0.38 A, VGEN = 4.5 V, Rg = 1  10 20 18 8 16 td(on) 2 4 9 18 7 14 8 16 1 A 0.8 1.2 V VDD = 15 V, RL = 37.5  ID  0.38 A, VGEN = 10 V, Rg = 1  tf Fall Time  f = 1 MHz 9 td(off) Turn-Off Delay Time nC tf tr Rise Time 0.15 0.20 td(on) Turn-On Delay Time pF ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = 0.38 A Body Diode Reverse Recovery Time trr 9 18 ns Body Diode Reverse Recovery Charge Qrr 2 4 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 0.38 A, dI/dt = 100 A/µs 5 4 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1028X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.015 TJ = 25 °C 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.012 0.009 0.006 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.003 10-8 10-9 0.000 0 VGS - Gate-Source Voltage (V) 6 12 18 24 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 6 12 18 24 0 30 1.0 30 0.5 VGS = 10 V thru 4 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 0.8 VGS = 3 V 0.6 0.4 0.2 0.3 0.2 TC = 25 °C 0.1 TC = 125 °C VGS = 2 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 0.7 1.4 2.1 2.8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.9 3.5 25 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 20 0.75 VGS = 4.5 V 0.6 VGS = 10 V Ciss 15 10 Coss Crss 0.45 5 0.3 0 0 0.2 0.4 0.6 ID - Drain Current (A) 0.8 1 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 For technical questions, contact: pmostechsupport@vishay.com 30 Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1028X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 1.75 ID = 0.5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.5 A 8 VDS = 7.5 V 6 VDS = 15 V 4 VDS = 24 V 2 0 0 0.3 0.6 0.9 VGS = 10 V 1.45 VGS = 4.5 V 1.15 0.85 0.55 - 50 1.2 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1.2 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 1.0 TJ = 125 °C 0.8 0.6 TJ = 25 °C TJ = 25 °C 0.1 0.2 0.4 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 2 Soure-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 2.7 1.75 ID = 250 μA 2.25 1.6 Power (W) VGS(th) (V) 1.8 1.45 1.35 0.9 1.3 0.45 1.15 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient For technical questions, contact: pmostechsupport@vishay.com Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1028X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.24 0.18 1 Limited by RDS(on)* 100 μs 1 ms 0.1 Power (W) ID - Drain Current (A) 10 10 ms 0.12 100 ms 0.01 0.06 1s DC, 10 s TA = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 Safe Operating Area, Junction-to-Ambient 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63862. Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000