SI1016X-T1-GE3

Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 2000 V ESD Protection • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 0.7  P-Channel, 1.2  • Low Threshold: ± 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • Compliant to RoHS Directive 2002/95/EC BENEFITS SOT-563 SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Marking Code: A APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits Top V iew Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD P-Channel Steady State 5s 20 Steady State Unit - 20 V ±6 515 485 - 390 - 370 370 350 - 280 - 265 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 5s 650 mA - 650 450 380 - 450 - 380 280 250 280 250 145 130 145 130 mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 www.vishay.com 1 Si1016X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) RDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD VDS = VGS, ID = 250 µA N-Ch 0.45 1 VDS = VGS, ID = - 250 µA P-Ch - 0.45 -1 N-Ch ± 0.5 ± 1.0 P-Ch ± 1.0 ± 2.0 VDS = 16 V, VGS = 0 V N-Ch 0.3 100 VDS = - 16 V, VGS = 0 V P-Ch - 0.3 - 100 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch -5 VDS = 0 V, VGS = ± 4.5 V VDS = 5 V, VGS = 4.5 V N-Ch 700 VDS = - 5 V, VGS = - 4.5 V P-Ch - 700 VGS = 4.5 V, ID = 600 mA N-Ch 0.41 VGS = - 4.5 V, ID = - 350 mA P-Ch 0.80 1.2 VGS = 2.5 V, ID = 500 mA N-Ch 0.53 0.85 VGS = - 2.5 V, ID = - 300 mA P-Ch 1.20 1.6 VGS = 1.8 V, ID = 350 mA V µA nA µA mA 0.70 N-Ch 0.70 1.25 VGS = - 1.8 V, ID = - 150 mA P-Ch 1.80 2.7 VDS = 10 V, ID = 400 mA N-Ch 1.0 VDS= - 10 V, ID = - 250 mA P-Ch 0.4 IS = 150 mA, VGS = 0 V N-Ch 0.8 1.2 IS = - 150 mA, VGS = 0 V P-Ch - 0.8 - 1.2  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time tON Turn-Off Time tOFF N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Channel VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  P-Channel VDD = - 10 V, RL = 47  ID  - 200 mA, VGEN = - 4.5 V, Rg = 10  N-Ch 750 P-Ch 1500 N-Ch 75 P-Ch 150 N-Ch 225 P-Ch 450 N-Ch 5 P-Ch 5 N-Ch 25 P-Ch 35 pC ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1200 VGS = 5 V thru 1.8 V 25 °C I D - Drain Current (mA) I D - Drain Current (A) TC = - 55 °C 1000 0.8 0.6 0.4 800 125 °C 600 400 0.2 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 2.4 1.6 VGS = 1.8 V 0.8 60 40 Crss VGS = 4.5 V 0 200 400 600 800 Coss 20 VGS = 2.5 V 0.0 VGS = 0 V f = 1 MHz Ciss 80 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4.0 0 0 1000 4 8 12 16 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.60 5 VDS = 10 V ID = 250 mA 1.40 3 2 1 0 0.0 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2.5 VGS = 4.5 V ID = 350 mA 1.20 VGS = 1.8 V ID = 150 mA 1.00 0.80 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 0.8 0.60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1016X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 1 0.0 4 ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 Source-Drain Diode Forward Voltage 3 4 5 6 On-Resistance vs. Gate-to-Source Voltage 3.0 0.3 2.5 0.2 ID = 0.25 mA 2.0 0.1 IGSS - ( μA) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 4.5 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 25 50 75 TJ - T emperature (°C) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - T emperature (°C) 100 125 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - T emperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1000 VGS = 5 V thru 3 V TJ = - 55 °C 2.5 V 0.6 2V 0.4 1.8 V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 125 °C 400 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 120 VGS = 0 V f = 1 MHz VGS = 1.8 V 100 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 600 200 4.0 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 Crss 0 0.0 0 200 400 600 800 0 1000 4 8 12 16 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 250 mA 4 RDS(on) - On-Resistance () (Normalized) VGS - Gate-to-Source Voltage (V) 25 °C 800 I D - Drain Current (mA) I D - Drain Current (A) 0.8 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 1.4 1.6 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si1016X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 1000 100 TJ = 25 °C TJ = - 55 °C 10 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 6 ID = 0.25 mA 0.1 2.0 IGSS - (µA) V GS(th) Variance (V) 1 0.0 4 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 TJ - T emperature (°C) 100 0.0 - 50 125 VGS = 4.5 V - 25 BVGSS - Gate-to-Source Breakdown Voltage (V) Threshold Voltage Variance vs. Temperature 0 25 50 75 TJ - T emperature (°C) 100 125 IGSS vs. Temperature 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - T emperature (°C) BVGSS vs. Temperature www.vishay.com 6 Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 Si1016X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71168. Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000