SI1470DH-T1-E3

Si1470DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.85 SOT-363 SC-70 (6-LEADS) APPLICATIONS • Load Switch D 1 6 D D D G 5 2 3 4 D AK XX YY Marking Code Lot Traceability and Date Code S G Part # Code Top View S Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free) Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TC = 25 °C 5.1 TC = 70 °C 4.0 TA = 25 °C ID Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C IDM 12 IAS 10 EAS 5 mJ 2.3 IS A 1.3b, c 2.8 1.8 PD W 1.5b, c 1.0b, c TA = 70 °C Operating Junction and Storage Temperature Range A 3.1b, c TC = 25 °C Maximum Power Dissipationa V 3.8b, c TA = 70 °C Pulsed Drain Current Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t≤5s RthJA 60 80 Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Document Number: 74277 S10-0646-Rev. B, 22-Mar-10 www.vishay.com 1 Si1470DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS Temperature Coefficient Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs V 27.41 mV/°C - 3.83 1.6 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 30 V, VGS = 0 V 1 nA VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA VDS = ≥ 5 V, VGS = 4.5 V 0.6 12 A VGS = 4.5 V, ID = 3.8 A 0.055 0.066 VGS = 2.5 V, ID = 3.1 A 0.079 0.095 VDS = 15 V, ID = 3.8 A 11.2 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg 510 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 39 VDS = 15 V, VGS = 5 V, ID = 3.8 A VDS = 15 V, VGS = 4.5 V, ID = 3.8 A 5 7.5 4.85 7.3 1.35 nC 1.26 f = 1 MHz td(on) tr 66 VDD = 15 V, RL = 5.0 Ω ID ≅ 3.0 A, VGEN = 4.5 V, Rg = 1 Ω tf 7.3 10.95 9.0 15 51 77 18 27 7.1 10.65 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.3 12 IS = 1.8 A IF = 2.3 A, dI/dt = 100 A/µs A 0.8 1.2 V 11.5 17.25 nC 5.2 7.8 7.7 ns 3.8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74277 S10-0646-Rev. B, 22-Mar-10 Si1470DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3.0 12 2.5 9 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 V thru 3 V VGS = 2.5 V 6 3 2.0 1.5 TC = 125 °C 1.0 VGS = 2 V TC = 25 °C 0.5 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 TC = - 55 °C 0.0 0.0 2.5 0.5 1.5 2.0 2.5 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Transfer Characteristics Curves vs. Temperature Output Characteristics 800 0.15 0.12 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.09 VGS = 4.5 V 0.06 600 Ciss 400 200 0.03 Coss 0 3 6 9 0 12 6 12 18 24 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.6 5 ID = 3.7 A VDS = 15 V VGS = 4.5 V ID = 3.7 A, 4.1 A 1.4 VDS = 24 V 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Crss 0 0 VGS = 2.5 V ID = 3.1 A 1.2 1.0 0.8 1 0 0 2 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74277 S10-0646-Rev. B, 22-Mar-10 6 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1470DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.16 TJ = 25 °C TJ = 150 °C 1 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 10 0.1 ID = 3.7 A 0.12 TA = 125 °C 0.08 TA = 25 °C 0.04 0.00 0.01 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 1.5 30 25 1.3 ID = 250 µA 20 1.1 Power (W) VGS(th) (V) 2 0.9 15 10 0.7 0.5 - 50 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC 0.01 0.001 0.1 TA = 25 °C Single Pulse 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74277 S10-0646-Rev. B, 22-Mar-10 Si1470DH Vishay Siliconix 6 3.6 5 3.0 Package Limited 4 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3 2.4 1.8 2 1.2 1 0.6 0 0.0 0 25 50 75 100 T C - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74277 S10-0646-Rev. B, 22-Mar-10 www.vishay.com 5 Si1470DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74277. www.vishay.com 6 Document Number: 74277 S10-0646-Rev. 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