SI1539DL-T1-GE3

Si1539DL Vishay Siliconix Complementary 30 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 0.940 at VGS = - 10 V - 0.45 1.700 at VGS = - 4.5 V - 0.33 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code RC XX YY S1 Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1539DL-T1-E3 (Lead (Pb)-free) Si1539DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 5s Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range PD 5s Steady State 30 - 30 0.63 0.54 0.45 0.43 - 0.45 - 0.42 - 0.32 - 0.31 1 0.25 0.23 - 0.25 - 0.23 0.30 0.27 0.30 0.27 0.16 0.14 0.16 0.14 TJ, Tstg Unit V ± 20 IDM Pulsed Drain Current P-Channel Steady State - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol t5s Maximum Junction-to-Ambienta Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS(th) Gate Threshold Voltage N-Ch 1 2.6 VDS = VGS, ID = - 250 µA P-Ch -1 - 2.6 VDS = 0 V, VGS = ± 20 V IGSS Gate-Body Leakage VDS = VGS, ID = 250 µA VDS = 24 V, VGS = 0 V IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Forward Transconductancea ± 100 N-Ch 1 P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 85 °C P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 1 VDS - 5 V, VGS = - 10 V P-Ch -1 VGS = 10 V, ID = 0.59 A N-Ch 0.410 0.480 VGS = - 10 V, ID = - 0.42 A P-Ch 0.800 0.940 VGS = 4.5 V, ID = 0.2 A N-Ch 0.600 0.700 VGS = - 4.5 V, ID = - 0.2 A P-Ch 1.500 1.700 RDS(on) gfs Diode Forward Voltagea ± 100 P-Ch VDS = - 24 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea N-Ch VSD V nA µA A VDS = 15 V, ID = 0.59 A N-Ch 0.75 VDS = - 15 V, ID = - 0.42 A P-Ch 0.5 IS = 0.23 A, VGS = 0 V N-Ch 0.80 1.2 IS = - 0.23 A, VGS = 0 V P-Ch - 0.86 - 1.2  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 15 V, VGS = 10 V, ID = 0.59 A P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 0.42 A 0.86 1.4 P-Ch 0.90 1.4 N-Ch 0.24 P-Ch 0.21 nC N-Ch 0.08 P-Ch 0.17 N-Ch 5 10 P-Ch 4 10 N-Ch 8 15 P-Ch 8 15 N-Ch 8 15 P-Ch 5 10 N-Ch 7 15 P-Ch 7 15 IF = 0.23 A, dI/dt = 100 A/µs N-Ch 15 30 IF = - 0.23 A, dI/dt = 100 A/µs P-Ch 20 40 N-Channel VDD = 15 V, RL = 30  ID  0.5 A, VGEN = 10 V, Rg = 6  P-Channel VDD = - 15 V, RL = 30  ID  - 0.5 A, VGEN = - 10 V, Rg = 6  trr N-Ch ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For more information please contact: pmostechsupport@vishay.com Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 VGS = 10 V thru 4 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 0.4 3V 0.2 0.6 0.4 TC = 125 °C 0.2 - 55 °C 25 °C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0.0 0.0 3.0 0.5 1.0 1.5 Output Characteristics 2.5 3.0 3.5 4.0 Transfer Characteristics 60 1.6 50 Ciss 1.2 0.8 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V VGS = 10 V 40 30 Coss 20 0.4 10 Crss 0.0 0.0 0 0.2 0.4 0.6 ID - Drain Current (A) 0.8 1.0 0 4 8 On-Resistance vs. Drain Current 20 1.8 VDS = 15 V ID = 0.59 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 Capacitance 10 8 6 4 2 0 0.0 12 VDS - Drain-to-Source Voltage (V) 0.2 0.4 0.6 0.8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 1.0 1.6 VGS = 10 V ID = 0.59 A 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature For more information please contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 1.8 ID = 0.59 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 1.5 TJ = 150 °C TJ = 25 °C 1.2 0.9 0.6 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 10 On-Resistance vs. Gate-to-Source Voltage 0.4 5 0.2 4 ID = 250 µA 0 Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 0.2 - 0.4 3 2 1 - 0.6 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10- 3 Threshold Voltage 10- 2 10- 1 1 Time (s) 10 100 600 Single Pulse Power Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 For more information please contact: pmostechsupport@vishay.com Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 TC = - 55 °C VGS = 10 V thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 4V 0.4 0.2 0.6 125 °C 0.4 0.2 2V 0.0 0.0 25 °C 3V 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 3.0 0 1 Output Characteristics 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics 80 3.0 60 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 4.5 V 1.5 VGS = 10 V 1.0 Ciss 40 Coss 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 ID - Drain Current (A) 0.8 On-Resistance vs. Drain Current Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 1.0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 20 Capacitance For more information please contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VDS = 15 V ID = 0.42 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 Qg - Total Gate Charge (nC) VGS = 10 V ID = 0.42 A 1.4 1.2 1.0 0.8 0.6 - 50 1.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 3.0 1 ID = 0.42 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 2.5 TJ = 150 °C 2.0 1.5 1.0 0.5 TJ = 25 °C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 5 4 0.4 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 2 1 - 0.2 - 0.4 - 50 3 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 6 125 150 0 10- 3 10- 2 10- 1 1 Time (s) 10 100 600 Single Pulse Power For more information please contact: pmostechsupport@vishay.com Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71250. Document Number: 71250 S12-0800-Rev. E, 16-Apr-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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