SI1905BDH-T1-E3

Si1905BDH Vishay Siliconix Dual P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY -8 RDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 10.5 nC APPLICATIONS • Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code DJ XX YY VDS (V) Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free) Si1905BDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 TC = 25 °C TC = 70 °C Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C - 0.50 ID - 0.58a, b - 0.47a, b IDM TC = 25 °C Continuous Source-Drain Diode Currenta, b TA = 25 °C TC = 70 °C TA = 25 °C - 0.30 IS - 0.25a, b 0.357 0.228 PD Soldering Recommendations (Peak Temperature) W 0.301a, b 0.193a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 1.8 TC = 25 °C Maximum Power Dissipationa, b V - 0.63 TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Unit - 55 to 150 c, d °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 400 °C/W. Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 1 Si1905BDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = - 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 1.66 - 0.45 - 1.0 V - 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V 7.15 - 1.8 µA A VGS = - 4.5 V, ID = - 0.58 A 0.450 0.542 VGS = - 2.5 V, ID = - 0.47 A 0.655 0.798 VGS = - 1.8 V, ID = - 0.2 A 0.950 1.2 VDS = - 4 V, ID = - 0.58 A 1.2 Ω S b Dynamic 62 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 12 Total Gate Charge Qg 1.0 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 4 V, VGS = 0 V, f = 1 MHz VDS = - 4 V, VGS = - 4.5 V, ID = - 0.58 A td(off) pF 1.5 0.19 nC 0.20 Ω f = 1 MHz 6.3 9 14 VDD = - 4 V, RL = 8.7 Ω ID ≅ - 0.46 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 50 75 60 90 td(on) tr 30 tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 0.30 - 1.8 IS = - 1.4 A, VGS = 0 V IF = - 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 25 38 ns 7 11 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 0.5 VGS = 5 V thru 2.5 V 0.4 I D - Drain Current (A) I D - Drain Current (A) 1.5 1.2 VGS = 2 V 0.9 0.6 VGS = 1.5 V 0.3 0.2 TJ = 25 °C TJ = 125 °C 0.1 0.3 0 TJ = - 55 °C 0 0 0.6 1.2 1.8 2.4 3.0 0 0.6 1.2 1.8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 2.4 100 1.6 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.8 V 1.2 VGS = 2.5 V 0.8 VGS = 4.5 V Ciss 60 40 Coss 0.4 20 0 0 Crss 0 0.3 0.6 0.9 1.2 1.5 1.8 0 2 I D - Drain Current (A) 4 6 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.8 1.5 4 3 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.57 A VDS = 4 V VDS = 6.4 V 2 1 VGS = 4.5 V, ID = 0.57 A VGS = 2.5 V, ID = 0.47 A 1.2 VGS = 1.8 V, ID = 0.06 A 0.9 0.6 0.3 0 0 0.3 0.6 0.9 1.2 0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 150 www.vishay.com 3 Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.57 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 1.5 1.0 TA = 125 °C 0.5 TA = 25 °C 0 0.001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 5 ID = 250 µA 4 Power (W) VGS(th) (V) 0.7 0.6 3 2 0.5 1 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 10 Limited by R DS(on)* I D - Drain Current (A) 1 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 * VGS 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.8 0.4 Power (W) I D - Drain Current (A) 0.6 0.4 0.3 0.2 0.2 0.1 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 5 Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74638. www.vishay.com 6 Document Number: 74638 S10-0792-Rev. C, 05-Apr-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1