SI1905BDH-T1-E3

New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) 0.542 at VGS = - 4.5 V 0.798 at VGS = - 2.5 V 1.2 at VGS = - 1.8 V ID (A) - 0.63 - 0.52 - 0.20 10.5 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code DJ XX G2 YY Lot Traceability and Date Code Part # Code G1 2 5 D2 3 4 S2 Top View Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d Symbol VDS VGS Limit -8 ±8 - 0.63 Unit V ID - 0.50 - 0.58a, b - 0.47a, b A IDM IS - 1.8 - 0.30 - 0.25a, b 0.357 - 0.301 0.301a, b 0.95a, b - 55 to 150 260 W PD TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, c Symbol t≤5s Steady State Steady State RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 400 °C/W. Document Number: 74638 S-72340-Rev. B, 05-Nov-07 www.vishay.com 1 New Product Si1905BDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 1.4 A, di/dt = 100 A/µs, TJ = 25 °C IS = - 1.4 A, VGS = 0 V - 0.8 25 7 9 16 TC = 25 °C - 0.30 - 1.8 - 1.2 38 11 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 4 V, RL = 8.7 Ω ID ≅ - 0.46 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz VDS = - 4 V, VGS = - 4.5 V, ID = - 0.58 A VDS = - 4 V, VGS = 0 V, f = 1 MHz 62 30 12 1.0 0.19 0.20 6.3 9 40 50 60 14 60 75 90 ns Ω 1.5 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = - 8 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 0.58 A VGS = - 2.5 V, ID = - 0.47 A VGS = - 1.8 V, ID = - 0.2 A VDS = - 4 V, ID = - 0.58 A - 1.8 0.450 0.655 0.950 1.2 0.542 0.798 1.2 S Ω - 0.45 -8 7.15 - 1.66 - 1.0 - 100 -1 - 10 V mV/°C V nA µA A Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74638 S-72340-Rev. B, 05-Nov-07 New Product Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 VGS = 5 V thru 2.5 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 0.4 0.5 1.2 VGS = 2 V 0.9 0.3 0.2 TJ = 25 °C 0.1 TJ = 125 °C 0.6 VGS = 1.5 V 0.3 0 0 0.6 1.2 1.8 2.4 3.0 0 0 0.6 1.2 TJ = - 55 °C 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 2.0 VGS = 1.8 V r DS(on) - On-Resistance (Ω) 1.6 C - Capacitance (pF) 80 100 Transfer Characteristics Ciss 60 1.2 VGS = 2.5 V 0.8 VGS = 4.5 V 0.4 40 Coss 20 Crss 0 0 0.3 0.6 0.9 1.2 1.5 1.8 0 0 2 4 6 8 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 ID = 0.57 A VGS - Gate-to-Source Voltage (V) 4 rDS(on) - On-Resistance (Normalized) 1.5 1.8 Capacitance VGS = 4.5 V, ID = 0.57 A VGS = 2.5 V, ID = 0.47 A 1.2 VGS = 1.8 V, ID = 0.06 A 0.9 3 VDS = 4 V VDS = 6.4 V 2 0.6 1 0.3 0 0 0.3 0.6 0.9 1.2 0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 74638 S-72340-Rev. B, 05-Nov-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 ID = 0.57 A r DS(on) - On-Resistance (Ω) 1 TJ = 150 °C 0.1 1.5 I S - Source Current (A) 1.0 TA = 125 °C TJ = 25 °C 0.01 0.5 TA = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 ID = 250 µA 4 0.7 V GS(th) (V) Power (W) 3 5 On-Resistance vs. Gate-to-Source Voltage 0.6 2 0.5 1 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage 10 Limited by rDS(on)* 1 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 * VGS 1 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified 10 Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74638 S-72340-Rev. B, 05-Nov-07 New Product Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.5 0.4 0.6 I D - Drain Current (A) 0.3 0.4 Power 0.2 0.2 0.1 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 0.0 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74638 S-72340-Rev. B, 05-Nov-07 www.vishay.com 5 New Product Si1905BDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74638. www.vishay.com 6 Document Number: 74638 S-72340-Rev. B, 05-Nov-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1