SI2304BDS-T1-E3

Si2304BDS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a, b IS TA = 25 °C TA = 70 °C PD 3.2 2.6 2.1 10 0.9 0.62 1.08 0.75 0.69 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V 2.5 IDM Pulsed Drain Current Maximum Power Dissipationa, b ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 90 115 130 166 60 75 Unit °C/W Notes: a. Surface mounted on FR4 board, t  5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72503 S11-1908-Rev. E, 26-Sep-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2304BDS Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Limits Parameter Symbol Test Conditions Min. Typ. Unit Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 0.5 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS = 30 V, VGS = 1 V, TJ = 25 °C 1 Gate-Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta VDS 4.5 V, VGS = 10 V ID(on) Drain-Source On-Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage V 3 nA µA 6 A VGS = 10 V, ID = 2.5 A 0.055 0.070 VGS = 4.5 V, ID = 2 A 0.080 0.105 gfs VDS = 4.5 V, ID = 2.5 A 6 VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4 4.6 7  S V Dynamic Gate Charge Qg Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 10 V, ID = 2.5 A nC 0.8 1.15 f = 1 MHz 0.6 3  6 225 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 50 28 Switching td(on) Turn-On Delay Time VDD = 15 V, RL = 15  ID  1 A, VGEN = 10 V, Rg = 6  tr Rise Time td(off) Turn-Off Delay Time 7.5 12 12.5 20 19 30 15 25 tf Fall Time ns Notes: a. Pulse test: PW  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 4V 2 6 4 TC = 125 °C 2 25 °C - 55 °C 3V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72503 S11-1908-Rev. E, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 0.24 300 C - Capacitance (pF) 0.20 0.16 R DS(on) - 0.12 VGS = 4.5 V 0.08 VGS = 10 V Ciss 250 200 150 100 Coss 0.04 50 Crss 0 0.00 0 2 4 6 ID - Drain Current (A) 8 0 10 5 10 On-Resistance vs. Drain Current 25 30 1.6 VDS = 15 V ID = 2.5 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 Capacitance 10 8 6 4 2 0 1 2 3 4 Qg - Total Gate Charge (nC) VGS = 10 V ID = 2.5 A 1.4 1.2 1.0 0.8 0.6 - 50 0 5 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 0.20 TJ = 150 °C 0.16 1 ID = 2.5 A 0.12 TJ = 25 °C 0.1 R DS(on) - I S - Source Current (A) 15 VDS - Drain-to-Source Voltage (V) 0.01 0.001 0.0 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72503 S11-1908-Rev. E, 26-Sep-11 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 10 8 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 TA = 25 °C Single Pulse 6 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.01 150 1 0.1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 10 µs 100 µs 1 1 ms 10 ms TA = 25 °C Single Pulse 0.1 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72503. www.vishay.com 4 Document Number: 72503 S11-1908-Rev. E, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000