Si2316BDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)a
0.050 at VGS = 10 V
4.5
0.080 at VGS = 4.5 V
3.4
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ)
3.16 nC
APPLICATIONS
• Battery Switch
• DC/DC Converter
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2316DS (M6)*
*Marking Code
Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)
Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Limit
30
± 20
4.5
3.6
3.9b, c
3.13b, c
20
1.39
1.04b, c
1.66
1.06
1.25b, c
0.8b, c
- 55 to 150
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
TJ, Tstg
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
≤5s
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 moard.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
Symbol
RthJA
RthJF
Typical
80
60
Maximum
100
75
Unit
°C/W
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Si2316BDS
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
23.92
mV/°C
5.2
3
V
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
1
20
µA
A
VGS = 10 V, ID = 3.9 A
0.041
0.050
VGS = 4.5 V, ID = 3.3 A
0.064
0.080
VDS = 15V, ID = 3.9 A
6
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
350
65
VDS = 15 V, VGS = 0 V, f = 1 MHz
37
VDS = 15 V, VGS = 10 V, ID = 3.9 A
6.35
9.6
3.16
4.8
VDS = 15 V, VGS = 4.5 V, ID = 3.9 A
1.56
f = 1 MHz
2.6
3.9
4.5
6.75
11
16.5
12
18
tf
7
10.5
td(on)
20
30
65
98
11
17
23
35
tr
Turn-Off Delay Time
td(off)
Fall Time
Turn-On Delay Time
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
nC
1.1
td(on)
Rise Time
pF
VDD = 15 V, RL = 4.8 Ω
ID ≅ 3.13 A, VGEN = 10 V, RG = 1 Ω
VDD = 15 V, RL = 6.25 Ω
ID = 2.4 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Ω
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
1.39
20
IS = 2.0 A
IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
10
15
ns
4
6
nC
6.6
3.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
Si2316BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
3
15
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 V thru 5 V
10
VGS = 4 V
2
1
TJ = 25 °C
5
TJ = 125 °C
VGS = 3 V
0
1
2
3
4
0
5
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.16
5
24
30
400
VGS = 4.5 V
0.12
0.08
300
Ciss
200
Coss
VGS = 10 V
0.04
100
0.00
Crss
0
0
4
8
12
16
20
0
6
12
18
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 3.9 A
VGS = 10 V, I D = 3.9 A
1.6
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
4
500
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TJ = - 55 °C
0
0
VDS = 16 V
6
VDS = 24 V
4
2
1.4
1.2
VGS = 4.5 V, ID = 3.3 A
1.0
0.8
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
150
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3
Si2316BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
100
RDS(on) - On-Resistance (Ω)
ID = 4.1 A
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.0
0.09
TA = 125 °C
0.06
0.03
TA = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
8
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.6
10
2.4
8
2.2
ID = 250 µA
2.0
TA = 25 °C
Single Pulse
6
Power (W)
VGS(th) (V)
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
4
1.8
2
1.6
1.4
- 50
- 25
0
25
50
75
100
125
0
0.01
150
1
0.1
10
100
600
Time (s)
TJ - Temperature ( C)
Threshold Voltage
Single Pulse Power
100
RDS(on) Limited*
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
1
*VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
Si2316BDS
Vishay Siliconix
5
2.0
4
1.6
3
1.2
Power
ID - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
0.8
1
0.4
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Foot
*The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM
Single Pulse
0.01
10- 4
10- 3
TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70445.
Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
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5
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Revision: 01-Jan-2022
1
Document Number: 91000