SI2316DS-T1-E3

Si2316DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET® Power MOSFET Pb-free Available RoHS* APPLICATIONS COMPLIANT • Battery Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2316DS (C6)* * Marking Code Ordering Information: Si2316DS-T1 Si2316DS-T1-E3 (Lead (Pb)-free) Si2316DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TA = 25 °C TA = 70 °C b 3.4 2.9 2.3 16 IS TA = 25 °C TA = 70 °C PD A 0.8 0.96 0.7 0.6 0.45 TJ, Tstg Operating Junction and Storage Temperature Range V 2.7 IDM Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 100 130 140 175 60 75 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71798 S-80642-Rev. C, 24-Mar-08 www.vishay.com 1 Si2316DS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 0.8 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 0.5 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(on) VDS ≥ 4.5 V, VGS = 10 V 6 VDS ≥ 4.5 V, VGS = 4.5 V 4 V nA µA A VGS = 10 V, ID = 3.4 A 0.042 0.050 VGS = 4.5 V, ID = 2.6 A 0.068 0.085 Forward Transconductancea gfs VDS = 4.5 V, ID = 3.4 A 6.0 Diode Forward Voltage VSD IS = 0.8 A, VGS = 0 V 0.8 1.2 4.3 7 VDS = 15 V, VGS = 10 V, ID = 3.4 A 0.65 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 1.2 215 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 90 55 Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω tf Fall Time 9 15 9 15 14 20 6 12 ns Notes: a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 16 16 VGS = 10 thru 5 V 14 14 12 I D - Drain Current (A) I D - Drain Current (A) 12 4V 10 8 6 3V 4 2 10 8 6 4 TC = 125 °C 2 25 °C - 55 °C 2V 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Document Number: 71798 S-80642-Rev. C, 24-Mar-08 Si2316DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 350 250 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 300 0.4 0.3 0.2 Ciss 200 150 0.1 Coss 100 VGS = 4.5 V Crss VGS = 10 V 50 0.0 0 0 2 4 6 8 10 12 14 16 0 5 10 I D - Drain Current (A) 25 30 Capacitance 2.0 10 VGS = 10 V ID = 3.4 A VDS = 15 V ID = 3.4 A 8 6 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 0.5 2 0.0 - 50 0 0 1 2 3 4 5 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.5 30 RDS(on) - On-Resistance (Ω) 10 I S - Source Current (A) 15 TJ = 150 °C 1 TJ = 25 °C 0.4 ID = 3.4 A 0.3 0.2 0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71798 S-80642-Rev. C, 24-Mar-08 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si2316DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 10 8 ID = 250 µA 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 6 TA = 25 °C 4 - 0.4 2 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 100 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 166 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71798. www.vishay.com 4 Document Number: 71798 S-80642-Rev. C, 24-Mar-08 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000