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SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT346

  • 描述:

    MOSFET N-CH 30V 4.5A SOT23-3

  • 数据手册
  • 价格&库存
SI2316BDS-T1-GE3 数据手册
Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ) 3.16 nC APPLICATIONS • Battery Switch • DC/DC Converter TO-236 (SOT-23) G 1 3 S D 2 Top View Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Limit 30 ± 20 4.5 3.6 3.9b, c 3.13b, c 20 1.39 1.04b, c 1.66 1.06 1.25b, c 0.8b, c - 55 to 150 ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter ≤5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 moard. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W. Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Symbol RthJA RthJF Typical 80 60 Maximum 100 75 Unit °C/W www.vishay.com 1 Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 23.92 mV/°C 5.2 3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 1 20 µA A VGS = 10 V, ID = 3.9 A 0.041 0.050 VGS = 4.5 V, ID = 3.3 A 0.064 0.080 VDS = 15V, ID = 3.9 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 350 65 VDS = 15 V, VGS = 0 V, f = 1 MHz 37 VDS = 15 V, VGS = 10 V, ID = 3.9 A 6.35 9.6 3.16 4.8 VDS = 15 V, VGS = 4.5 V, ID = 3.9 A 1.56 f = 1 MHz 2.6 3.9 4.5 6.75 11 16.5 12 18 tf 7 10.5 td(on) 20 30 65 98 11 17 23 35 tr Turn-Off Delay Time td(off) Fall Time Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time nC 1.1 td(on) Rise Time pF VDD = 15 V, RL = 4.8 Ω ID ≅ 3.13 A, VGEN = 10 V, RG = 1 Ω VDD = 15 V, RL = 6.25 Ω ID = 2.4 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.39 20 IS = 2.0 A IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 10 15 ns 4 6 nC 6.6 3.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3 15 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 5 V 10 VGS = 4 V 2 1 TJ = 25 °C 5 TJ = 125 °C VGS = 3 V 0 1 2 3 4 0 5 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 0.16 5 24 30 400 VGS = 4.5 V 0.12 0.08 300 Ciss 200 Coss VGS = 10 V 0.04 100 0.00 Crss 0 0 4 8 12 16 20 0 6 12 18 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 3.9 A VGS = 10 V, I D = 3.9 A 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 500 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TJ = - 55 °C 0 0 VDS = 16 V 6 VDS = 24 V 4 2 1.4 1.2 VGS = 4.5 V, ID = 3.3 A 1.0 0.8 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 150 www.vishay.com 3 Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 100 RDS(on) - On-Resistance (Ω) ID = 4.1 A I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.0 0.09 TA = 125 °C 0.06 0.03 TA = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.6 10 2.4 8 2.2 ID = 250 µA 2.0 TA = 25 °C Single Pulse 6 Power (W) VGS(th) (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 4 1.8 2 1.6 1.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 1 0.1 10 100 600 Time (s) TJ - Temperature ( C) Threshold Voltage Single Pulse Power 100 RDS(on) Limited* I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 *VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Si2316BDS Vishay Siliconix 5 2.0 4 1.6 3 1.2 Power ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 0.8 1 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot *The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM Single Pulse 0.01 10- 4 10- 3 TA = PDMZthJA(t) 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70445. Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
SI2316BDS-T1-GE3 价格&库存

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