SI3458DV-T1-E3

Si3458DV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A) 0.10 at VGS = 10 V 3.2 0.13 at VGS = 4.5 V 2.8 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3458DV-T1-E3 (Lead (Pb)-free) Si3458DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C 2.5 IDM 15 Silngle Avalanche Current IAS 10 TA = 25 °C TA = 70 °C A 2 PD W 1.3 TJ, Tstg Operating Junction and Storage Temperature Range V 3.2 ID Pulsed Drain Current Maximum Power Dissipationa,b Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Symbol t≤5s Steady State Steady State RthJA RthJL Typical Maximum Unit 62.5 106 °C/W 35 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 5 s. Document Number: 70859 S09-0765-Rev. E, 04-May-09 www.vishay.com 1 Si3458DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VDS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 150 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = 5 V, VGS = 10 V V 10 nA µA A VGS = 10 V, ID = 3.2 A 0.085 0.10 VGS = 4.5 V, ID = 2.8 A 0.110 0.13 VDS = 4.5 V, ID = 3.2 A 8 VDS = 30 V, VGS = 10 V, ID = 3.2 A 4.0 Ω S b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8 td(off) nC 2.0 1 td(on) tr 16 VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tf 3.9 10 20 10 20 20 40 10 20 Ω ns Source-Drain Rating Characteristicsb IS 1.7 Pulsed Current ISM 15 Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V trr IF = 1.7 A, dI/dt = 100 A/µs Continuous Current Source-Drain Reverse Recovery Time 50 A 1.2 V 90 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70859 S09-0765-Rev. E, 04-May-09 Si3458DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 VGS = 10 V thru 5 V 12 9 ID - Drain Current (A) ID - Drain Current (A) 12 4V 6 9 6 TC = 125 °C 3 3 25 °C - 55 °C 3V 0 0 0 1 2 3 0 4 1 4 5 Transfer Characteristics Output Characteristics 600 0.20 500 C - Capacitance (pF) 0.16 VGS = 4.5 V 0.12 VGS = 10 V 0.08 0.04 400 Ciss 300 200 Coss 100 0.00 Crss 0 0 3 6 9 12 15 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 2.0 10 VDS = 30 V ID = 3.2 A VGS = 10 V ID = 3.2 A RDS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 2 6 4 1.6 1.2 0.8 2 0 0 2 4 6 8 0.4 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70859 S09-0765-Rev. E, 04-May-09 150 www.vishay.com 3 Si3458DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 20 R DS(on) - On-Resistance (Ω) ID = 3.2 A IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.12 0.08 0.04 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 25 0.2 20 ID = 250 µA 0.0 Power (W) VGS(th) - Variance (V) 0.16 - 0.2 15 10 - 0.4 5 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.1 0.01 10 1 Time (s) 100 600 Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 106 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 t1 t2 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70859. www.vishay.com 4 Document Number: 70859 S09-0765-Rev. E, 04-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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