SI3493DDV-T1-GE3

Si3493DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Single D 6 • TrenchFET® Gen III p-channel power MOSFET S 4 D 5 • RDS(on) rating at VGS = -1.8 V • 100 % Rg and UIS tested 1 D Top View 2 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 G APPLICATIONS S • Battery management in mobile devices • Battery switch Marking code: BQ • Load switch PRODUCT SUMMARY VDS (V) • PA switch -20 RDS(on) max. () at VGS = -4.5 V 0.0240 RDS(on) max. () at VGS = -2.5 V 0.0321 RDS(on) max. () at VGS = -1.8 V 0.0511 Qg typ. (nC) D P-Channel MOSFET 19.8 ID (A) a, d Configuration G -8 Single ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and halogen-free Si3493DDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -20 Gate-source voltage VGS ±8 Continuous drain current (TJ = 150 °C) TA = 25 °C -8 ID -7.5 b, c -6 b, c TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C -3 IS -1.67 b, c IAS -10 5 EAS mJ 3.6 2.3 PD W 2 b, c 1.3 b, c TA = 70 °C Operating junction and storage temperature range A -32 TC = 25 °C Maximum power dissipation V -8 a TC = 25 °C TC = 70 °C UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b t5s Maximum junction-to-case (drain) Steady state Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 °C/W. S16-2645-Rev. A, 26-Dec-16 SYMBOL TYPICAL MAXIMUM RthJA 50 62.5 RthJC 28 35 UNIT °C/W Document Number: 74735 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3493DDV www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -12 - - 2.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID =-250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -10 VDS  -10 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -7.5 A - 0.0200 0.0240 VGS = -2.5 V, ID = -6.4 A - 0.0257 0.0321 VGS = -1.8 V, ID = -2 A - 0.0378 0.0511 VDS = -10 V, ID = -7.5 A - 30 - - 1825 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 210 - - 200 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -7.5 A - 34.8 52.2 - 19.8 30 VDS = -10 V, VGS = -4.5 V, ID = -7.5 A - 2.6 - - 3 - f = 1 MHz 2.12 10.6 21.2 - 25 38 - 30 45 - 95 145 tf - 40 60 td(on) - 8 16 td(on) tr td(off) tr td(off) VDD = -10 V, RL = 1.67 , ID  -6 A, VGEN = -4.5 V, Rg = 1  VDD = -10 V, RL = 1.67 , ID  -6 A, VGEN = -8 V, Rg = 1  tf - 20 30 - 115 173 - 40 60 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -6 A, VGS = 0 V IF = -6 A, dI/dt = 100 A/μs, TJ = 25 °C - - -8 - - -32 A - -0.8 -1.2 V - 21 32 ns - 9 18 nC - 9 - - 12 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2645-Rev. A, 26-Dec-16 Document Number: 74735 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3493DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 32 10000 10000 60 VGS = 5 V thru 2.5 V 100 VGS = 1.5 V 8 TC = 25 °C 40 1000 1st line 2nd line 16 2nd line ID - Drain Current (A) 1000 VGS = 2 V 1st line 2nd line 2nd line ID - Drain Current (A) 50 24 30 20 100 10 TC = 125 °C 0 0 0.5 1 1.5 TC = -55 °C 0 10 2 10 0 1 2 3 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 4 Axis Title Axis Title 10000 0.06 10000 2800 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 100 2100 Ciss 1000 1st line 2nd line 1000 0.04 2nd line C - Capacitance (pF) 0.05 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS = 1.8 V 1400 100 700 Coss 0.01 Crss 0 0 10 8 16 24 10 0 32 5 10 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line VDS = 5 V VDS = 16 V 2 100 1 0 10 0 7 14 21 28 2nd line RDS(on) - On-Resistance (Normalized) VDS = 10 V 4 3 10000 1.5 10000 ID = 7.5 A 20 Axis Title 5 2nd line VGS - Gate-to-Source Voltage (V) 15 VGS = 4.5 V, ID = 7.5 A; VGS = 2.5 V, ID = 6.4 A 1.3 1000 1.1 VGS = 1.8 V, 2 A 100 0.9 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-2645-Rev. A, 26-Dec-16 1st line 2nd line 0 Document Number: 74735 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3493DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 1 TJ = 25 °C 0.1 100 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0.05 1000 0.04 0.03 TJ = 150 °C 0.02 100 TJ = 25 °C 0.01 0 10 0 10000 0.06 1st line 2nd line 100 10 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title ID = 250 μA 0.6 36 Power (W) 1000 0.5 1st line 2nd line 2nd line VGS(th) (V) 45 10000 0.7 0.4 0.3 27 18 100 9 0.2 0.1 10 -50 -25 0 25 50 75 0 100 125 150 0.001 0.01 0.1 TJ - Temperature (°C) 2nd line 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 IDM limited 100 μs 10 1000 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) Limited by RDS(on) (1) 10 ms 100 ms 100 10 s, 1 s DC 0.1 BVDSS limited TA = 25 °C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2645-Rev. A, 26-Dec-16 Document Number: 74735 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3493DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 12 2nd line ID - Drain Current (A) 9 1st line 2nd line 1000 6 100 3 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 4.5 10000 1.5 3.6 10000 1.2 0.9 1st line 2nd line 1.8 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 2.7 0.6 100 0.9 100 0.3 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2645-Rev. A, 26-Dec-16 Document Number: 74735 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3493DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74735. S16-2645-Rev. A, 26-Dec-16 Document Number: 74735 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern For TSOP-5L / TSOP-6L 5 1 2 4 6 5 4 3 1 2 3 TSOP 5L TSOP 6L 0.036 [0.922] 0.136 [3.444] 0.064 [1.626] 0.095 [2.408] 0.037 [0.950] 0.020 [0.508] 0.017 [0.442] Note • All dimensions are in inches (millimeter) ECN: C22-0860-Rev. B, 24-Oct-2022 DWG: 3010 Revision: 24-Oct-2022 Document Number: 72610 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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