SI3850ADV-T1-GE3

Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.300 at VGS = 4.5 V 1.4 0.410 at VGS = 3.0 V 1.2 0.640 at VGS = - 4.5 V - 0.96 0.980 at VGS = - 3.0 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC S2 TSOP-6 Top View G1 1 6 S1 D 2 5 D G2 3 4 S2 G2 D G1 Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free) Si3850ADV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation (Surface Mounted on FR4 Board) TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range P-Channel - 20 ± 12 1.4 - 0.96 1.1 - 0.77 IDM 3.5 - 2.0 IS 0.9 ID A W 0.70 TJ, Tstg V - 0.9 1.08 PD Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, ± ≤ 10 s) Symbol N- or P-Channel Unit RthJA 115 °C/W Note: Maximum under Steady State condition is 150 °C/W. Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 1 Si3850ADV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 70 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 70 °C P-Ch VDS = 5 V, VGS = 4.5 V N-Ch 3.0 VDS = - 5 V, VGS = - 4.5 V P-Ch - 1.5 VGS = 4.5 V, ID = 0.5 A N-Ch nA µA - 10 A 0.240 0.300 VGS = - 4.5 V, ID = - 0.5 A P-Ch 0.510 0.640 VGS = 3.0 V, ID = 0.5 A N-Ch 0.325 0.410 VGS = - 3.0 V, ID = - 0.5 A P-Ch 0.780 0.980 VDS = 10 V, ID = 1 A N-Ch 1.8 VDS = - 10 V, ID = - 1 A P-Ch 1.1 IS = 0.9 A, VGS = 0 V N-Ch 0.87 1.2 IS = - 0.8 A, VGS = 0 V P-Ch - 1.0 - 1.3 N-Ch 0.95 1.4 P-Ch 1.10 1.7 N-Ch 0.22 P-Ch 0.28 N-Ch 0.24 P-Ch 0.26 VSD V Ω S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Body Diode Reverse Recovery Tme Body Diode Reverse Recovery Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1 A Qgs Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A Rg td(on) tr td(off) tf trr Qrr N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 0.9 A, VGEN = 4.5 V, Rg = 1 Ω nC N-Ch 3.5 5.3 P-Ch 10.5 16 N-Ch 8 14 P-Ch 13 20 N-Ch 16 25 P-Ch 34 50 N-Ch 20 30 P-Ch 18 30 N-Ch 9 15 P-Ch 18 30 N-Ch 20 30 IF = - 0.9 A, dI/dt = 100 A/µs P-Ch 25 40 IF = 0.9 A, dI/dt = 100 A/µs N-Ch 9 15 IF = - 0.9 A, dI/dt = 100 A/µs P-Ch 9 15 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 0.9 A, VGEN = - 4.5 V, Rg = 1 Ω IF = 0.9 A, dI/dt = 100 A/µs Ω ns nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3.5 VGS = 5.0 V thru 4 V 3.0 - 55 °C 3V 2.5 2.0 I D - Drain Current (A) I D - Drain Current (A) 2.4 2.5 V 1.5 1.0 25 °C 1.8 TC = 125 °C 1.2 0.6 0.5 2V 0.0 0.0 0.0 0.7 1.4 2.1 2.8 3.5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.7 110 VGS = 2.5 V 88 0.5 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 VGS = 3 V 0.4 VGS = 4.5 V 0.3 0.2 Ciss 66 Coss 44 22 Crss 0.1 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.8 ID = 1.2 A ID = 1 A 1.6 8 VGS = 3 V VDS = 5 V VDS = 10 V 6 VGS = 15 V 4 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 10 0 0.0 4 VGS = 4.5 V 1.2 1.0 0.8 0.5 1.0 1.5 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 150 www.vishay.com 3 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 150 °C 1 25 °C 0.1 0.01 1.2 0.9 0.6 125 °C 0.3 25 °C 0.001 0.0 0.0 0.3 0.6 0.9 1.2 0 1.5 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 30 0.2 0.1 24 - 0.0 18 Power (W) VGS(th) Variance (V) 2 - 0.1 ID = 5 mA 12 - 0.2 - 0.3 - 0.4 - 50 6 ID = 250 µA - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1 10 10 I D - Drain Current (A) Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 5 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 2.5 VGS = 5 V thru 4 V - 55 °C 1.6 3.5 V I D - Drain Current (A) I D - Drain Current (A) 2.0 1.5 3V 1.0 2.5 V 25 °C TC = 125 °C 1.2 0.8 0.4 0.5 2V 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 110 2.0 88 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 3 V 1.5 1.0 VGS = 4.5 V 0.5 66 Coss 44 Crss 22 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 0.5 A ID = 1 A VDS = 5 V 1.6 8 R DS(on) - On-Resi stance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 6 VGS = 15 V 4 2 0 0.0 www.vishay.com 6 VGS = 3 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.5 1.0 1.5 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 1 25 °C 0.1 0.01 0.001 2.4 1.8 125 °C 1.2 25 °C 0.6 0.0 0.0 0.4 0.8 1.2 1.6 0 2.0 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 30 0.3 24 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 2 ID = 5 mA 0.1 18 12 0.0 6 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power vs. Junction-to-Ambient 10 I D - Drain Current (A) Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 7 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73789. www.vishay.com 8 Document Number: 73789 S09-2110-Rev. 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