SI3850ADV-T1-E3

Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (Ω) 0.300 at VGS = 4.5 V 0.410 at VGS = 3.0 V 0.640 at VGS = - 4.5 V 0.980 at VGS = - 3.0 V ID (A) 1.4 1.2 - 0.96 - 0.78 FEATURES • 100 % Rg Tested RoHS COMPLIANT P-Channel - 20 TSOP-6 Top View G1 D 1 6 S1 D G2 S2 2 5 D G2 3 4 S2 G1 Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation (Surface Mounted on FR4 Board) Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 ± 12 1.4 1.1 3.5 0.9 1.08 0.70 - 55 to 150 - 0.96 - 0.77 - 2.0 - 0.9 P-Channel - 20 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board, ± ≤ 10 sec) Symbol RthJA N- or P-Channel 115 Unit °C/W Notes: Maximum under Steady State condition is 150 °C/W. Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 1 Si3850ADV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS = - 20 V, VGS = 0 V, TJ = 70 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 0.5 A Drain-Source On-State Resistanceb rDS(on) VGS = - 4.5 V, ID = - 0.5 A VGS = 3.0 V, ID = 0.5 A VGS = - 3.0 V, ID = - 0.5 A Forward Transconductanceb Diode Forward Voltageb Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Body Diode Reverse Recovery Tme Body Diode Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 0.9 A, VGEN = 4.5 V, RG = 1 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 0.9 A, VGEN = - 4.5 V, RG = 1 Ω IF = 0.9 A, di/dt = 100 A/µs IF = - 0.9 A, di/dt = 100 A/µs IF = 0.9 A, di/dt = 100 A/µs IF = - 0.9 A, di/dt = 100 A/µs P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.95 1.10 0.22 0.28 0.24 0.26 3.5 10.5 8 13 16 34 20 18 9 18 20 25 9 9 5.3 16 14 20 25 50 30 30 15 30 30 40 15 15 nC ns Ω 1.4 1.7 nC gfs VSD VDS = 10 V, ID = 1 A VDS = - 10 V, ID = - 1 A IS = 0.9 A, VGS = 0 V IS = - 0.8 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3.0 - 1.5 0.240 0.510 0.325 0.780 1.8 1.1 0.87 - 1.0 1.2 - 1.3 0.300 0.640 0.410 0.980 S V Ω N-Ch P-Ch 0.6 - 0.6 1.5 - 1.5 ± 100 1 -1 10 - 10 A µA V nA Symbol Test Conditions Min Typ Max Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 3.5 VGS = 5.0 thru 4 V 3.0 3V I D – Drain Current (A) I D – Drain Current (A) 2.5 2.0 2.5 V 1.5 1.0 0.5 2V 0.0 0.0 0.0 0.7 1.4 2.1 2.8 3.5 0 1 2 3 4 2.4 25 °C 1.8 TC = 125 °C 1.2 25 °C, unless noted 3.0 - 55 °C 0.6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.7 0.6 0.5 0.4 0.3 0.2 22 0.1 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4 Crss VGS = 4.5 V VGS = 3 V C – Capacitance (pF) VGS = 2.5 V 88 110 Transfer Characteristics r DS(on)– On-Resistance (Ω) 66 Ciss 44 Coss 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS – Gate-to-Source Voltage (V) ID = 1 A 8 VDS = 5 V rDS(on) – On-Resistance (Normalized) VDS = 10 V 1.6 1.8 ID = 1.2 A Capacitance VGS = 3 V 1.4 VGS = 4.5 V 1.2 6 4 VGS = 15 V 1.0 2 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 3 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 10 1.5 1 r DS(on)– On-Resistance (Ω) 150 °C I S – Source Current (A) 1.2 25 °C 0.1 0.9 0.6 125 °C 0.01 0.3 25 °C 0.001 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 30 On-Resistance vs. Gate-to-Source Voltage 0.1 24 V GS(th) Variance (V) - 0.0 Power (W) 18 - 0.1 ID = 5 mA - 0.2 12 - 0.3 ID = 250 µA 6 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (°C) Threshold Voltage Single Pulse Power 10 *Limited by rDS(on) I D – Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 ms 1s 10 s dc 0.01 100 VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = Notes: 2. Per Unit Base = RthJA = 100 °C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 5 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2.5 VGS = 5 thru 4 V 2.0 I D – Drain Current (A) I D – Drain Current (A) 3.5 V 1.5 3V 1.0 2.5 V 0.5 2V 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 1.6 25 °C 1.2 TC = 125 °C 2.0 - 55 °C 0.8 0.4 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 2.5 110 Transfer Characteristics r DS(on)– On-Resistance (Ω) C – Capacitance (pF) 2.0 VGS = 2.5 V 88 Ciss 1.5 VGS = 3 V 66 1.0 VGS = 4.5 V 0.5 44 Coss 22 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS – Gate-to-Source Voltage (V) ID = 1 A VDS = 5 V 8 VDS = 10 V 6 VGS = 15 V rDS(on) – On-Resi stance (Normalized) 1.6 1.8 ID = 0.5 A Capacitance VGS = 3 V 1.4 VGS = 4.5 V 1.2 4 1.0 2 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 10 3.0 1 r DS(on)– On-Resistance (Ω) TJ = 150 °C I S – Source Current (A) 2.4 25 °C 0.1 1.8 125 °C 1.2 25 °C 0.6 0.01 0.001 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 30 On-Resistance vs. Gate-to-Source Voltage 0.3 V GS(th) Variance (V) ID = 250 µA 0.2 Power (W) 18 24 0.1 ID = 5 mA 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (°C) Threshold Voltage 10 Single Pulse Power vs. Junction-to-Ambient *Limited by rDS(on) I D – Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 ms 1s 10 s dc 0.01 100 VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Safe Operating Area Document Number: 73789 S-60470-Rev. A, 27-Mar-06 www.vishay.com 7 Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W Notes: Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73789. www.vishay.com 8 Document Number: 73789 S-60470-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1