SI4435DDY-T1-GE3

New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 15 nC APPLICATIONS • Load Switches • Battery Switch SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free) Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 2.0a, b - 20 20 5.0 3.2 2.5a, b 1.6a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V - 11.4 - 9.1 - 8.1a, b - 6.5a, b - 50 - 4.1 IDM Pulsed Drain Current Unit A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. Document Number: 68841 S09-0863-Rev. C, 18-May-09 www.vishay.com 1 New Product Si4435DDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamicb RDS(on) gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time mV/°C 4.5 - 1.0 - 3.0 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 9.1 A - 30 0.024 VGS = - 4.5 V, ID = - 6.9 A 0.028 0.035 VDS = - 10 V, ID = - 9.1 A 23 1350 VDS = - 15 V, VGS = 0 V, f = 1 MHz 215 pF 185 VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A 32 50 15 25 VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A 4 f = 1 MHz 5.8 10 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω Ω 15 15 70 tf 12 25 td(on) 42 70 tr nC 7.5 8 td(off) Ω S 45 td(off) µA A 0.0195 td(on) tr V - 31 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω tf 35 60 40 70 16 30 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.1 - 50 IS = - 2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 34 60 ns 22 40 nC 11 23 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68841 S09-0863-Rev. C, 18-May-09 New Product Si4435DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 1.0 VGS = 10 V thru 5 V 0.8 VGS = 4 V 30 20 10 TC = - 55 °C ID - Drain Current (A) I D - Drain Current (A) 40 0.6 0.4 TC = 25 °C 0.2 VGS = 3 V 0 0.0 0.5 1.0 1.5 TC = 125 °C 0.0 0.0 2.0 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 3.0 2400 0.04 1800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 0.03 VGS = 10 V 0.02 Ciss 1200 600 0.01 Coss Crss 0 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 9.1 A ID = 9.1 A VGS = 10 V 8 VDS = 15 V 6 VDS = 7.5 V VDS = 22.5 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.2 0.9 2 VGS = 4.5 V 0 0 9 18 27 36 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68841 S09-0863-Rev. C, 18-May-09 150 www.vishay.com 3 New Product Si4435DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.06 ID = 9.1 A 0.05 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.001 0.0 0.04 TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 100 0.6 80 ID = 250 µA 0.2 60 Power (W) VGS(th) Variance (V) 0.4 ID = 1 mA 40 0.0 20 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 100 s, DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68841 S09-0863-Rev. C, 18-May-09 New Product Si4435DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 ID - Drain Current (A) 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 2.0 4.8 1.6 3.6 1.2 Power (W) Power (W) Current Derating* 2.4 0.8 0.4 1.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68841 S09-0863-Rev. C, 18-May-09 www.vishay.com 5 New Product Si4435DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDM Z thJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68841. www.vishay.com 6 Document Number: 68841 S09-0863-Rev. C, 18-May-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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