SI4804BDY-T1-E3

Si4804BDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Symmetrical Buck-Boost DC/DC Converter D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free) Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 7.5 5.7 4.6 30 1.7 IAS 5 mJ 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range A 0.9 10 EAS PD V 6.0 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Limits Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typ. Max. 52 62.5 93 110 35 40 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72061 S10-0461-Rev. G, 22-Feb-10 www.vishay.com 1 Si4804BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.8 Typ.a Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage b V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C 15 VDS = 5 V, VGS = 10 V RDS(on) 3.0 ± 100 20 µA A VGS = 10 V, ID = 7.5 A 0.017 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 gfs VDS = 15 V, ID = 7.5 A 19 VSD IS = 1 A, VGS = 0 V 0.75 1.2 7 11 Ω S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 0.5 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.9 2.5 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs 1.5 2.6 9 15 10 17 19 30 9 15 35 55 Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72061 S10-0461-Rev. G, 22-Feb-10 Si4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 5 V 4V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 1200 0.040 Ciss 960 0.030 C - Capacitance (pF) R DS(on) - On Resistance (Ω) 1 VGS = 4.5 V 0.020 VGS = 10 V 720 480 Coss 0.010 240 Crss 0.000 0 0 5 10 15 20 25 30 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.8 VDS = 15 V ID = 7.5 A 1.6 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72061 S10-0461-Rev. G, 22-Feb-10 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 0.06 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.04 ID = 7.5 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 100 0.2 80 ID = 250 µA 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 60 Power (W) V GS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) 40 20 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 1 100 ms 0.1 0.01 0.1 1s 10 s TC = 25 °C Single Pulse 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot www.vishay.com 4 Document Number: 72061 S10-0461-Rev. G, 22-Feb-10 Si4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 93 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72061. Document Number: 72061 S10-0461-Rev. G, 22-Feb-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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