SI4816DY-T1-E3

Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 SO-8 G1 G1 1 8 D1 A/S2 2 7 D2/S1 A/S2 3 6 D2/S1 G2 4 5 D2/S1 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4816DY-T1-E3 (Lead (Pb)-free) Si4816DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Channel-1 Parameter Symbol 10 s Channel-2 Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C 6.3 5.4 IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) Avalanche Currentb Single Pulse Avalanche Energy ID b Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range 10 s 5.3 10 4.2 8.2 7.7 6.2 40 0.9 2.2 A 1.15 IAS 12 25 EAS 7.2 31.25 PD mJ 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.8 TJ, Tstg Unit V 30 1.3 Steady State W - 55 to 150 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Channel-2 Schottky Typ. Max. Typ. Max. Typ. Max. 72 90 43 53 48 60 100 125 82 100 80 100 51 63 25 30 28 35 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Starting date code W46BAA. Document Number: 71121 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Symbol Test Conditions Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistance ID(on) b Forward Transconductanceb Diode Forward Voltageb VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5.4 A VGS = 4.5 V, ID = 8.6 A VDS = 15 V, ID = 6.3 A VDS = 15 V, ID = 10 A IS = 1.3 A V, VGS = 0 V IS = 1 A V, VGS = 0 V RDS(on) gfs VSD Min. Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Typ.a 0.8 1.0 Max. 2 3 100 100 1 100 15 2000 20 30 Unit V nA µA A 0.018 0.0105 0.024 0.015 17 28 0.7 0.47 0.022 0.013 0.030 0.0185 8.0 15 1.75 5.3 3.2 4.6 12 23 Ω S 1.1 0.5 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Channel-2 VDS = 15 V, VGS = 5 V, ID = - 10 A Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.3 A, dI/dt = 100 A/µs IF = 2.2 A, dI/dt = 100 µA/µs Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1.5 0.5 10 15 5 5 26 44 8 12 30 32 nC 6.1 2.6 20 30 10 10 50 80 16 24 60 70 Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 1.0 A IF = 1.0 A, TJ = 125 °C VR = 30 V VR = 30 V, TJ = 100 °C VR = - 30 V, TJ = 125 °C VR = 10 V Min. Typ. 0.47 0.36 0.004 0.7 3.0 50 Max. 0.50 0.42 0.100 10 20 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 3V 18 12 6 18 12 TC = 125 °C 6 1V 25 °C 2V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 3.5 4.0 Transfer Characteristics 0.030 1000 0.024 800 Ciss C - Capacitance (pF) RD S(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.018 VGS = 4.5 V VGS = 10 V 0.012 1.5 - 55 °C 600 400 Coss 200 0.006 Crss 0 0.000 0 8 16 24 32 0 40 6 12 ID - Drain Current (A) On-Resistance vs. Drain Current 24 30 Capacitance 10 1.8 VDS = 15 V ID = 6.3 A 1.6 VGS = 10 V ID = 6.3 A 8 6 4 1.4 (Normalized) R DS(on) - On-Resistance V G S - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 1.2 1.0 0.8 2 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71121 S09-0868-Rev. G, 18-May-09 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4816DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 40 R D S(on) - On-Resistance (Ω) I S - Source Current (A) ID = 10 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 100 0.4 80 ID = 250 µA 0.0 Power (W) VG S(th) Variance (V) 0.2 - 0.2 - 0.4 60 40 - 0.6 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 TJ - Temperature (°C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 24 16 TC = 125 °C 8 8 25 °C 3V - 55 °C 2V 0 0.0 0 0 2 4 6 8 10 0.5 1.0 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 2500 0.024 2000 C - Capacitance (pF) R D S(on) - On-Resistance (Ω) 1.5 VGS = 4.5 V 0.018 VGS = 10 V 0.012 Ciss 1500 1000 Coss 500 0.006 Crss 0 0.000 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 71121 S09-0868-Rev. G, 18-May-09 40 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 5 Si4816DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 VDS = 15 V ID = 9.5 A VGS = 10 V ID = 9.5 A 1.6 8 6 4 1.4 (Normalized) R DS(on) - On-Resistance V G S - Gate-to-Source Voltage (V) 10 1.2 1.0 0.8 2 0.6 0 0 6 12 18 24 0.4 - 50 30 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.05 40 R D S(on) - On-Resistance (Ω) I S - Source Current (A) ID = 9.5 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 100 0.4 ID = 250 µA 80 0.0 Power (W) VG S(th) Variance (V) 0.2 - 0.2 - 0.4 60 40 - 0.6 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 6 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 71121 S09-0868-Rev. G, 18-May-09 Si4816DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71121 S09-0868-Rev. G, 18-May-09 www.vishay.com 7 Si4816DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 200 160 1 C - Capacitance (pF) I R - Reverse Current (mA) 10 30 V 0.1 24 V 0.01 120 80 Coss 40 0.001 0 0.0001 0 25 50 75 100 125 0 150 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) TJ - Temperature (°C) Reverse Current vs. Junction Temperature Capacitance 10 I F - Forward Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Forward Voltage Drop Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71121. www.vishay.com 8 Document Number: 71121 S09-0868-Rev. 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