Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
RDS(on) (Ω)
ID (A)
0.0185 at VGS = 10 V
6.8
0.0225 at VGS = 4.5 V
6.0
0.0115 at VGS = 10 V
11.4
0.016 at VGS = 4.5 V
9.5
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
Qg (Typ.)
7.8
11.6
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V at 1.0 A
2.0
D1
SO-8
G1
G1
1
8
D1
A/S2
2
7
D2/S1
A/S2
3
6
D2/S1
G2
4
5
D2/S1
N-Channel 1
MOSFET
S1/D2
Schottky Diode
G2
Top View
N-Channel 2
MOSFET
Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free)
Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Channel-1
Parameter
Symbol
10 s
Channel-2
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
a
Continuous Source Current (Diode Conduction)
IS
Single Pulse Avalanche Current
IAS
Avalanche Energy
Maximum Power Dissipationa
6.8
5.8
11.4
4.6
9.0
L = 0.1 mH
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
30
1
PD
0.9
6.5
2.2
A
1.15
20
5
20
mJ
1.4
1.0
2.4
1.25
0.9
0.64
1.5
0.8
TJ, Tstg
Unit
8.2
40
10
EAS
Steady State
V
5.5
IDM
Pulsed Drain Current
10 s
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Channel-2
Schottky
Typ.
Max.
Typ.
Max.
Typ.
Max.
72
90
43
53
48
60
100
125
82
100
80
100
51
63
25
30
28
35
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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1
Si4816BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = 20 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
ID(on)
RDS(on)
gfs
VSD
Ch-1
1.0
3.0
Ch-2
1.0
3.0
Ch-1
100
Ch-2
100
Ch-1
1
Ch-2
100
Ch-1
15
Ch-2
V
nA
µA
2000
VDS = 5 V, VGS = 10 V
Ch-1
20
Ch-2
30
VGS = 10 V, ID = 6.8 A
Ch-1
A
0.0155
0.0185
VGS = 10 V, ID = 11.4 A
Ch-2
0.0093
0.0115
VGS = 4.5 V, ID = 6.0 A
Ch-1
0.0185
0.0225
VGS = 4.5 V, ID = 9.5 A
Ch-2
0.013
0.016
VDS = 15 V, ID = 6.8 A
Ch-1
30
VDS = 15 V, ID = 11.4 A
Ch-2
31
IS = 1 A, VGS = 0 V
Ch-1
0.73
1.1
IS = 1 A, VGS = 0 V
Ch-2
0.47
0.5
Ch-1
7.8
10
Ch-2
11.6
18
Ch-1
2.9
Ch-2
4.8
Ch-1
2.3
Ω
S
V
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.8 A
Qgs
Qgd
Channel-2
VDS = 15 V, VGS = 5 V, ID = - 11.4 A
Ch-2
Rg
td(on)
tr
td(off)
tf
3.7
Ch-1
1.5
3.0
4.5
Ch-2
0.9
1.8
2.7
Ch-1
11
17
Ch-2
13
20
Ch-1
9
15
Ch-2
9
15
Ch-1
24
40
Ch-2
31
50
Ch-1
9
15
Ch-2
11
17
IF = 1.3 A, dI/dt = 100 A/µs
Ch-1
20
35
IF = 2.2 A, dI/dt = 100 µA/µs
Ch-2
25
40
Channel-1
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Channel-2
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
trr
nC
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Si4816BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Test Conditions
Typ.
Max.
IF = 1.0 A
0.47
0.50
IF = 1.0 A, TJ = 125 °C
0.36
0.42
VR = 30 V
0.004
0.100
VR = 30 V, TJ = 100 °C
0.7
10
VR = - 30 V, TJ = 125 °C
3.0
20
VR = 10 V
50
CT
Junction Capacitance
Min.
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 4 V
35
35
I D - Drain Current (A)
I D - Drain Current (A)
30
25
20
15
30
25
20
15
TC = 125 °C
10
10
3V
5
5
25 °C
- 55 °C
2V
0
0.0
0
0
1
2
3
4
5
0.5
1.0
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.05
1200
1000
0.04
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.5
0.03
VGS = 4.5 V
0.02
VGS = 10 V
Ciss
800
600
400
Coss
0.01
200
Crss
0.00
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
30
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Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
6
VGS = 10 V
ID = 6.8 A
5
4
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
10
25
50
75
100
125
Gate Charge
On-Resistance vs. Junction Temperature
150
0.05
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
TJ = 25 °C
0.04
0.03
ID = 6.8 A
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
100
0.2
80
ID = 250 µA
0.0
Power (W)
V GS(th) Variance (V)
0
TJ - Junction Temperature (°C)
10
1
0.0
- 25
Qg - Total Gate Charge (nC)
40
I S - Source Current (A)
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
VDS = 15 V
ID = 6.8 A
- 0.2
60
40
- 0.4
20
- 0.6
- 0.8
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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4
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
1 ms
1
ID(on)
Limited
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -1
10 -2
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 5 V
32
4V
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
24
16
TC = 125 °C
8
8
3V
0
1
2
- 55 °C
2V
0
3
4
25 °C
0
0.0
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
2000
0.016
1600
4.0
4.5
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.012
VGS = 10 V
0.008
1200
800
Coss
0.004
400
0.000
0
Crss
0
5
10
15
20
25
0
30
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.6
6
VGS = 10 V
ID = 9.5 A
VDS = 15 V
ID = 9.5 A
1.4
4
3
2
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.2
1.0
0.8
1
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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6
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
40
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 9.5 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
10
100
1
80
VDS = 30 V
0.1
Power (W)
IR - Reverse Current (mA)
0.04
VDS = 24 V
0.01
60
40
0.001
20
0.0001
0.00001
0
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Reverse Current vs. Junction Temperature
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
1 ms
1
ID(on)
Limited
10 ms
100 ms
0.1
1s
TC = 25 °C
Single Pulse
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = R thJA = 82 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Si4816BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
I F - Forward Current (A)
I R - Reverse Current (mA)
TJ = 150 °C
1
0.1
30 V
24 V
0.01
TJ = 25 °C
0.001
1
0.0
0.0001
0
25
50
75
100
125
150
TJ - Temperature ( °C)
0.3
0.6
0.9
1.2
1.5
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
200
C - Capacitance (pF)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73026.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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9
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000