SI4816BDY

Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel Channel-1 30 Channel-2 Channel 2 rDS(on) (W) 0.0185 @ VGS = 10 V 0.0225 @ VGS = 4.5 V 0.0115 @ VGS = 10 V 0.016 @ VGS = 4.5 V ID (A) 6.8 6.0 11.4 9.5 Qg (Typ) 7. 78 11.6 11 6 FEATURES D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A D1 IF (A) 2.0 SO-8 G1 A/S2 A/S2 G2 1 2 3 4 Top View Ordering Information: Si4816BDY—E3 Si4816BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D2/S1 D2/S1 D2/S1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 A Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 20 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State Steady State Unit V 6.8 5.5 30 1 1.4 0.9 5.8 4.6 0.9 1.0 0.64 −55 to 150 11.4 9.0 40 2.2 2.4 1.5 8.2 6.5 1.15 1.25 0.8 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com t v 10 sec Steady-State Steady-State Channel-2 Typ 43 82 25 Schottky Typ 48 80 28 Symbol RthJA RthJF Typ 72 100 51 Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W 1 Si4816BDY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA 50 VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C V On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.8 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 11.4 A VGS = 4.5 V, ID = 6.0 A VGS = 4.5 V, ID = 9.5 A Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V, ID = 6.8 A VDS = 15 V, ID = 11.4 A IS = 1 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.0155 0.0093 0.0185 0.013 30 31 0.73 0.47 1.1 0.5 0.0185 0.0115 0.0225 0.016 S V W 1.0 1.0 3.0 3.0 100 100 1 100 15 2000 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W Channel 2 Channel-2 VDD = 15 V RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W Channel-1 Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.8 A Channel 2 Channel-2 VDS = 15 V, VGS = 5 V, ID = −11.4 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1.5 0.9 7.8 11.6 2.9 4.8 2.3 3.7 3.0 1.8 11 13 9 9 24 31 9 11 20 25 4.5 2.7 17 20 15 15 40 50 15 17 35 40 ns W 10 18 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Forward Voltage Drop Vishay Siliconix Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = −30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current Junction Capacitance Irm CT mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 Output Characteristics 40 35 I D − Drain Current (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 3V 2V VGS = 10 thru 4 V I D − Drain Current (A) 40 35 30 25 20 15 10 5 0 0.0 Transfer Characteristics TC = 125_C 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1200 1000 C − Capacitance (pF) 800 600 400 Capacitance DS(on) − On-Resistance ( W ) 0.04 Ciss 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 Coss 200 0 Crss r 0.00 0 5 10 15 20 25 30 35 40 ID − Drain Current (A) Document Number: 73026 S-41510—Rev. A, 09-Aug-04 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) www.vishay.com 3 Si4816BDY Vishay Siliconix New Product CHANNEL-1 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 6.8 A 1.4 rDS(on) − On-Resiistance (Normalized) VGS = 10 V ID = 6.8 A TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) 0.05 Source-Drain Diode Forward Voltage 40 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 DS(on) − On-Resistance ( W ) 0.04 I S − Source Current (A) 0.03 ID = 6.8 A TJ = 25_C 0.02 0.01 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) −0.0 −0.2 −0.4 −0.6 −0.8 −50 20 100 Single Pulse Power, Junction-to-Ambient 80 60 40 0 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) www.vishay.com 4 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 *rDS(on) Limited Vishay Siliconix CHANNEL-1 Safe Operating Area IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 1s 10 s dc 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 5 Si4816BDY Vishay Siliconix New Product CHANNEL-2 Transfer Characteristics 40 VGS = 10 thru 5 V 32 I D − Drain Current (A) I D − Drain Current (A) 4V 24 32 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 24 16 16 TC = 125_C 8 25_C −55_C 8 3V 0 0 1 2 3 2V 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 0.020 On-Resistance vs. Drain Current 2000 Capacitance r DS(on) − On-Resistance ( W ) 0.016 0.012 C − Capacitance (pF) VGS = 4.5 V 1600 Ciss VGS = 10 V 1200 0.008 800 Coss 400 Crss 0.004 0.000 0 5 10 15 20 25 30 ID − Drain Current (A) 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 VDS = 15 V ID = 9.5 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.5 A 1.4 rDS(on) − On-Resiistance (Normalized) 6 9 12 15 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) www.vishay.com 6 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.05 Vishay Siliconix CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 DS(on) − On-Resistance ( W ) 0.04 I S − Source Current (A) 0.03 TJ = 25_C 0.02 ID = 9.5 A 0.01 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature 10 1 IR − Reverse Current (mA) 0.1 0.01 VDS = 30 V Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 80 VDS = 24 V 40 0.001 0.0001 20 0.00001 0 25 50 75 100 125 150 TJ − Temperature (_C) 100 0 0.001 0.01 0.1 Time (sec) 1 10 Safe Operating Area *rDS(on) Limited IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 1s 10 s dc Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 7 Si4816BDY Vishay Siliconix New Product CHANNEL-2 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 2. Per Unit Base = RthJA = 82_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 73026 S-41510—Rev. A, 09-Aug-04 Si4816BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 I R − Reverse Current (mA) Vishay Siliconix SCHOTTKY Forward Voltage Drop 10 TJ = 150_C Reverse Current vs. Junction Temperature 0.1 30 V 24 V I F − Forward Current (A) 1 TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ − Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF − Forward Voltage Drop (V) Capacitance 200 160 C − Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73026. Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 9