SI4840BDY-T1-GE3

Si4840BDY www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G D • Synchronous rectification • POL, IBC - Secondary side G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration Available 40 0.009 0.012 15 19 d Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free SO-8 Si4840BDY-T1-E3 Si4840BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Avalanche current Avalanche energy SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous source-drain diode current TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range ID IDM IAS EAS IS PD TJ, Tstg LIMIT 40 ± 20 19 15 12.4 a, b 9.9 a, b 50 15 11 5 2.1 a, b 6 3.8 2.5 a, b 1.6 a, b -55 to +150 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c Maximum junction-to-foot (drain) t  10 s Steady state SYMBOL RthJA RthJF TYPICAL 37 17 MAXIMUM 50 21 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 85 °C/W d. Based on TC = 25 °C S17-1827-Rev. D, 11-Dec-17 Document Number: 69795 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4840BDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - - V 40 - - -6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS , ID = 250 μA 1 - 3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 50 - - A  VGS = 10 V, ID = 12.4 A - 0.0074 0.0090 VGS = 4.5 V, ID = 10.8 A - 0.0095 0.0120 VDS = 15 V, ID = 12.4 A - 56 - - 2000 - - 260 - - 150 - - 33 50 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 12.4 A - 15 23 VDS = 20 V, VGS = 4.5 V, ID = 12.4 A - 6.7 - - 5.1 - f = 1 MHz - 1.4 2.1 - 25 40 td(on) tr VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  - 12 20 - 25 40 tf - 10 15 td(on) - 10 15 td(off) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf - 15 25 - 30 45 - 10 15 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = 10 A, VGS = 0 V - - 30 - - 50 - 0.8 1.2 A V Body diode reverse recovery time trr - 30 60 ns Body diode reverse recovery charge Qrr - 26 52 nC Reverse recovery fall time ta - 17.5 - Reverse recovery rise time tb - 12.5 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1827-Rev. D, 11-Dec-17 Document Number: 69795 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4840BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 3V 10 6 TC = 25 °C 4 TC = 125 °C 2 2V 0 TC = -55 °C 0 0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 2400 0.012 Ciss 0.010 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2000 0.008 VGS = 10 V 1600 1200 800 0.006 Coss 400 0.004 Crss 0 0 10 20 30 ID - Drain Current (A) 40 50 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 35 40 125 150 Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 R DS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 3.5 VDS = 20 V ID = 12.4 A 8 6 4 2 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge S17-1827-Rev. D, 11-Dec-17 30 35 1.6 VGS = 10 V ID = 12.4 A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69795 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4840BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.030 ID = 12.4 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 150 °C 10 TJ = 25 °C 0.020 125 °C 0.015 0.010 25 °C 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 ID = 250 µA 2.2 40 Power (W) V GS(th) (V) 2.0 1.8 1.6 30 20 1.4 10 1.2 1.0 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on) (1) 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single pulse 0.01 0.1 (1) BVDSS limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1827-Rev. D, 11-Dec-17 Document Number: 69795 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4840BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 6 5 Power Dissipation (W) I D - Drain Current (A) 20 15 10 5 4 3 2 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 TC - Case Temperature (°C) 150 Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-1827-Rev. D, 11-Dec-17 Document Number: 69795 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4840BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = RthJA = 68 °C/W 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69795. S17-1827-Rev. D, 11-Dec-17 Document Number: 69795 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000