SI4948BEY-T1-E3

Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175° MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V - 3.1 0.150 at VGS = - 4.5 V - 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free) Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C - 2.4 - 2.6 - 2.0 - 25 - 1.1 IAS 15 11 mJ 2.4 1.4 1.7 0.95 TJ, Tstg Operating Junction and Storage Temperature Range A -2 EAS PD V - 3.1 IDM Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ID Unit - 55 to 175 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 53 62.5 85 110 30 37 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72847 S09-1002-Rev. B, 01-Jun-09 www.vishay.com 1 Si4948BEY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. -1 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 70 °C - 10 VDS = - 5 V, VGS = - 10 V RDS(on) Forward Transconductancea -3 ± 100 µA - 25 A VGS = - 10 V, ID = - 3.1 A 0.100 0.120 VGS = - 4.5 V, ID = - 0.2 A 0.126 0.150 gfs VDS = - 15 V, ID = - 3.1 A 8.5 VSD IS = - 2 A, VGS = 0 V - 0.8 - 1.2 14.5 22 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 3.7 f = 1 MHz VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 14 td(on) Turn-On Delay Time nC 2.2 IF = - 2 A, dI/dt = 100 A/µs 10 15 15 22 50 75 35 55 30 50 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 V thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 4V 10 5 15 10 TC = 125 °C 5 25 °C 3V - 55 °C 0 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 7 8 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72847 S09-1002-Rev. B, 01-Jun-09 Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.40 1000 800 0.30 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.35 0.25 0.20 VGS = 4.5 V 0.15 VGS = 10 V Ciss 600 400 0.10 200 Coss 0.05 0.00 Crss 0 0 5 10 15 20 25 0 10 ID - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 VDS = 30 V ID = 3.1 A VGS = 10 V ID = 3.1 A 2.0 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0.6 - 50 0 0 3 6 9 12 15 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 20 175 0.40 0.35 RDS(on) - On-Resistance (Ω) TJ = 150 °C IS - Source Current (A) 10 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 TJ = 25 °C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72847 S09-1002-Rev. B, 01-Jun-09 10 www.vishay.com 3 Si4948BEY Vishay Siliconix 0.6 50 0.4 40 ID = 250 µA Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0.0 30 20 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited I D - Drain Current (A) 10 Limited by RDS(on)* P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 0.01 0.1 P(t) = 0.01 P(t) = 0.1 TA = 25 °C Single Pulse BVDSS Limited 1 10 P(t) = 1 P(t) = 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72847 S09-1002-Rev. B, 01-Jun-09 Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72847. Document Number: 72847 S09-1002-Rev. B, 01-Jun-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000