SI5481DU-T1-E3

New Product Si5481DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET® Power MOSFET • New thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile Qg (Typ.) 20 nC 1 Switch for Portable Devices 2 4 D D 8 G D 7 Marking Code BC G XXX Lot Traceability and Date Code S 6 S 3 D D COMPLIANT APPLICATIONS • Load Switch, Battery Switch, PA Switch and Charger PowerPAK ChipFET Single D RoHS S Part # Code 5 D Bottom View P-Channel MOSFET Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit - 20 ±8 Unit V - 12a - 12a - 9.7b, c - 7.8b, c - 20 - 14.8 A - 2.6b, c 17.8 11.4 W 3.1b, c 2b, c - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 30 5.5 Maximum 40 7 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W. Document Number: 73777 S-81448-Rev. C, 23-Jun-08 www.vishay.com 1 New Product Si5481DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time mV/°C 2.5 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.5 A 20 0.022 0.024 0.029 VGS = - 1.8 V, ID = 2.4 A 0.033 0.041 VDS = - 10 V, ID = - 6.5 A 25 1610 VDS = - 10 V, VGS = 0 V, f = 1 MHz 300 pF 200 VDS = - 10 V, VGS = - 8 V, ID = - 9.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 9.7 A 33 50 20 30 2.8 VDD = - 10 V, RL = 1.3 Ω ID ≅ - 7.8 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 8 13 20 75 135 tf 167 250 td(on) 6 15 tr nC 5.1 f = 1 MHz 50 td(off) Ω S 90 td(off) µA A 0.018 VGS = - 2.5 V, ID = - 5.7 A td(on) tr V - 15.5 VDD = - 10 V, RL = 1.3 Ω ID ≅ - 7.8 A, VGEN = - 8 V, Rg = 1 Ω tf 25 40 90 135 167 250 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 14.8 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 IS = - 7.8 A, VGS = 0 V IF = - 7.8 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 60 ns 17 30 nC 14 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73777 S-81448-Rev. C, 23-Jun-08 New Product Si5481DU Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 10 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 1.5 V 8 4 6 4 TC = 125 °C TC = 25 °C 2 1V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 2500 2000 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 VGS = 1.8 V 0.04 VGS = 2.5 V Ciss 1500 1000 0.02 Coss 500 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 ID = 6.5 A ID = 9.7 A 1.4 6 RDS(on) - On-Resistance (Normalized) VG S - Gate-to-Source Voltage (V) 12 VDS = 10 V VDS = 16 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.0 0.8 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73777 S-81448-Rev. C, 23-Jun-08 30 35 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5481DU Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.08 RDS(on) - Drain-to-Source On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.0 ID = 6.5 A 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 40 0.8 30 Power (W) VGS(th) (V) 0.7 0.6 20 0.5 10 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TA = 25 °C Single Pulse BVDSS limited 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73777 S-81448-Rev. C, 23-Jun-08 New Product Si5481DU Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 18 28 16 24 Power Dissipation (W) I D - Drain Current (A) 14 20 16 Package Limited 12 8 12 10 8 6 4 4 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73777 S-81448-Rev. C, 23-Jun-08 www.vishay.com 5 New Product Si5481DU Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73777. www.vishay.com 6 Document Number: 73777 S-81448-Rev. 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