Si5504DC
Vishay Siliconix
Complementary 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
RDS(on) (Ω)
ID (A)
0.085 at VGS = 10 V
± 3.9
0.143 at VGS = 4.5 V
± 3.0
0.165 at VGS = - 10 V
± 2.8
0.290 at VGS = - 4.5 V
± 2.1
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET®
D1
S2
1
S1
D1
G1
D1
G2
S2
D2
Marking Code
G2
G1
EA XX
D2
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free)
Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
PD
P-Channel
Steady State
5s
30
Steady State
- 30
± 3.9
± 2.9
± 2.8
± 2.1
± 2.8
± 2.1
± 2.0
± 1.5
± 10
1.8
0.9
- 1.8
- 0.9
2.1
1.1
2.1
1.1
1.1
0.6
1.1
0.6
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
Unit
V
± 20
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
5s
A
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
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Si5504DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
1.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.0
VDS = 0 V, VGS = ± 20 V
IGSS
VDS = 24 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
V
N-Ch
± 100
P-Ch
± 100
N-Ch
1
VDS = - 24 V, VGS = 0 V
P-Ch
-1
VDS = 24 V, VGS = 0 V, TJ = 85 °C
N-Ch
5
VDS = - 24 V, VGS = 0 V, TJ = 85 °C
P-Ch
-5
VDS ≥ 5 V, VGS = 10 V
N-Ch
10
VDS ≤ - 5 V, VGS = - 10 V
P-Ch
- 10
VGS = 10 V, ID = 2.9 A
N-Ch
0.072
0.085
VGS = - 10 V, ID = - 2.1 A
P-Ch
0.137
0.165
VGS = 4.5 V, ID = 2.2 A
N-Ch
0.120
0.143
VGS = - 4.5 V, ID = - 1.6 A
P-Ch
0.240
0.290
ID(on)
RDS(on)
gfs
VSD
nA
µA
A
VDS = 15 V, ID = 2.9 A
N-Ch
6
VDS = - 15 V, ID = - 2.1 A
P-Ch
3
IS = 0.9 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 0.9 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
N-Channel
VDS = 15 V, VGS = 10 V, ID = 2.9 A
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 2.1 A
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
td(off)
tf
5
7.5
P-Ch
5.5
6.6
N-Ch
0.8
P-Ch
1.2
nC
N-Ch
1.0
P-Ch
0.9
N-Ch
7
11
P-Ch
8
12
N-Ch
12
18
P-Ch
11
18
N-Ch
12
18
P-Ch
14
21
N-Ch
7
11
P-Ch
8
12
IF = 0.9 A, dI/dt = 100 A/µs
N-Ch
40
80
IF = - 0.9 A, dI/dt = 100 A/µs
P-Ch
40
80
P-Channel
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
trr
N-Ch
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
VGS = 10 V thru 5 V
8
6
I D - Drain Current (A)
I D - Drain Current (A)
8
4V
4
2
6
4
TC = - 125 °C
2
3V
25 °C
- 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
3.0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
400
0.15
300
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
VGS = 4.5 V
0.10
VGS = 10 V
5
Ciss
200
0.05
100
0.00
0
Coss
Crss
0
2
4
6
8
0
10
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.8
10
1.6
VDS = 15 V
ID = 2.9 A
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
6
4
2
VGS = 10 V
ID = 2.9 A
1.4
1.2
1.0
0.8
0
0
1
2
3
4
5
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
150
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Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
0.15
ID = 2.9 A
0.10
0.05
TJ = 25 °C
0.00
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 250 µA
0.2
0.0
Power (W)
VGS(th) Variance (V)
40
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
10-1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
6V
VGS = 10 V thru 7 V
TC = - 55 °C
8
5V
I D - Drain Current (A)
I D - Drain Current (A)
8
6
4
4V
2
25 °C
6
125 °C
4
2
3V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.4
6
400
320
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 4.5 V
0.3
0.2
VGS = 10 V
0.1
Ciss
240
160
Coss
80
Crss
0.0
0
0
2
4
6
8
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
10
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
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Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
VGS = 10 V
ID = 2.1 A
VDS = 15 V
ID = 2.1 A
1.4
6
4
1.2
1.0
0.8
2
0.6
- 50
0
0
1
2
3
4
5
6
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.4
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.3
ID = 2.1 A
0.2
0.1
0.0
0.1
0
0.3
0.6
0.9
1.2
0
1.5
6
8
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.4
40
0.2
ID = 250 µA
0.0
- 0.2
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6
4
VGS - Gate-to-Source Voltage (V)
0.6
- 0.4
- 50
2
VSD - Source-to-Drain Voltage (V)
Power (W)
VGS(th) Variance (V)
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
30
20
10
- 25
0
25
50
75
100
125
150
0
10-4
10-3
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
100
10
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71056.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
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Revision: 01-Jan-2022
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Document Number: 91000