SI5504BDC-T1-E3

New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V 0.140 at VGS = - 10 V 0.235 at VGS = - 4.5 V ID (A) 4a 4a - 3.7 - 2.8 Qg (Typ) 2 nC FEATURES • TrenchFET® Power MOSFETs APPLICATIONS • DC-DC for Portable Applications • Load Switch RoHS COMPLIANT P-Channel - 30 2.2 nC 1206-8 ChipFET Dual 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EF XXX Lot Traceability and Date Code Part # Code S1 G1 G2 D2 P-Channel MOSFET Bottom View N-Channel MOSFET Ordering Information: Si5504BDC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS N-Channel 30 ± 20 4a 3.8 3.7b, c 2.6b, c 10 2.5 1.3b, c 3.12 2 1.5b, c 0.8b, c - 55 to 150 260 - 3.7 - 2.7 - 2.5b, c - 1.8b, c - 10 - 2.5 - 1.3b, c 3.1 2 1.5b, c 0.8b, c A P-Channel - 30 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel Typ Max P-Channel Typ Max Unit t ≤ 5 sec RthJA 70 85 70 85 Maximum Junction-to-Ambientb, f °C/W RthJF Maximum Junction-to-Foot (Drain) Steady State 33 40 33 40 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 120 °C/W. Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 1 New Product Si5504BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C VDS = - 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V VDS ≤ - 5 V, VGS = - 10 V VGS = 10 V, ID = 3.1 A Drain-Source On-State Resistanceb rDS(on) VGS = - 10 V, ID = - 2.1 A VGS = 4.5 V, ID = 1 A VGS = - 4.5 V, ID = - 0.43 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 3.6 A Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A N-Channel VDS = 15 V, VGS = 4.5 V, ID = 3.6 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A f = 1 MHz N-Ch N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 220 170 50 50 25 31 4.5 4.5 2 2.2 0.7 0.7 0.7 1 3 13 Ω 7 7 3 3.5 nC pF gfs VDS = 15 V, ID = 3.1 A VDS = - 15 V, ID = - 2.1 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 - 10 0.053 0.112 0.081 0.188 5 3.5 0.065 0.140 0.100 0.235 S Ω 1.5 - 1.5 30 - 30 27 - 30 -5 3.5 3 -3 100 - 100 1 -1 5 -5 A µA V nA mV/°C V Symbol Test Conditions Min Typ Max Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 74483 S-71327-Rev. A, 02-Jul-07 New Product Si5504BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol Test Conditions N-Ch N-Channel VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS = 2.6 A, VGS = 0 V IS = - 2 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Channel IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 2 A, di/dt = - 100 A/µs, TJ = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min Typ 15 30 80 60 12 10 25 10 4 4 12 10 10 10 5 5 Max 25 45 120 90 20 15 40 15 8 8 20 15 15 15 10 10 2.5 - 2.5 10 - 10 Unit td(on) tr td(off) tf td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 °C A 0.8 - 0.8 30 20 20 10 23 13 7 7 1.2 - 1.2 50 40 40 20 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 3 New Product Si5504BDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 16 I D - Drain Current (A) VGS = 10 thru 6 V 5V I D - Drain Current (A) 4 12 3 TC = 25 °C 2 TC = 125 °C 1 8 4V 4 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 300 Transfer Characteristics r DS(on) - On-Resistance (Ω) 0.16 C - Capacitance (pF) 250 Ciss 200 0.12 VGS = 4.5 V 150 0.08 VGS = 10 V 0.04 100 Coss 50 Crss 0 5 10 15 20 25 30 0.00 0 5 10 ID - Drain Current (A) 15 20 0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 VDS = 15 V, ID = 3.6 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance 1.6 1.8 Capacitance VGS = 10 V, 4.5 V ID = 3.1 A 1.4 (Normalized) 6 1.2 4 VDS = 24 V, ID = 3.6 A 1.0 2 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 74483 S-71327-Rev. A, 02-Jul-07 New Product Si5504BDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.20 ID = 3.1 A r DS(on) - On-Resistance (Ω) 0.16 I S - Source Current (A) 0.12 25 °C TJ = 150 °C TJ = 25 °C 0.08 125 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.04 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 50 On-Resistance vs. Gate-to-Source Voltage 2.2 ID = 250 µA 2.0 Power (W) VGS(th) (V) 40 30 1.8 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (sec) Threshold Voltage 10 *Limited by rDS(on) 100 µs Single Pulse Power I D - Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms 1 s, 10 s dc 0.01 0.01 *VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 5 New Product Si5504BDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 5 3 ID - Drain Current (A) 4 Package Limited 3 Power Dissipation (W) 2 2 1 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74483 S-71327-Rev. A, 02-Jul-07 New Product Si5504BDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 7 New Product Si5504BDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 4 5 6 4V 4 3 2 TC = 125 °C 1 25 °C 2 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.4 250 Transfer Characteristics r DS(on) - On-Resistance (Ω) 200 0.3 C - Capacitance (pF) 150 Ciss VGS = 4.5 V 0.2 VGS = 10 V 0.1 100 Coss 50 Crss 0.0 0 2 4 6 8 10 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 2.5 A VGS - Gate-to-Source Voltage (V) 8 rDS(on) - On-Resistance (Normalized) VDS = 15 V 6 VDS = 24 V 1.6 1.8 Capacitance VGS = 4.5 V, 10 V ID = 2.2 A 1.4 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 74483 S-71327-Rev. A, 02-Jul-07 New Product Si5504BDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.4 ID = 2.2 A r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.3 125 °C 0.2 TJ = 150 °C TJ = 25 °C 25 °C 0.1 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.2 2.1 2.0 V GS(th) (V) Power (W) 1.9 1.8 1.7 1.6 10 1.5 1.4 - 50 30 ID = 250 µA 40 50 On-Resistance vs. Gate-to-Source Voltage 20 - 25 0 25 50 75 100 125 150 0 0.0001 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (sec) Threshold Voltage 10 *Limited by rDS(on) 100 µs Single Pulse Power I D - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s dc BVDSS TA = 25 °C Single Pulse 0.01 0.01 *VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 9 New Product Si5504BDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.5 3.0 I D - Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Power Dissipation (W) 3 4 2 1 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74483 S-71327-Rev. A, 02-Jul-07 New Product Si5504BDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10- 3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10- 3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74483. Document Number: 74483 S-71327-Rev. A, 02-Jul-07 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1