SI5513DC-T1-E3

Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4 3 1206-8 ChipFET® 1 S1 D1 S2 D1 G1 D1 S2 D2 Marking Code G2 G2 EB XX Lot Traceability and Date Code D2 G1 Part # Code Bottom View Ordering Information: Si5513DC-T1-E3 (Lead (Pb)-free) Si5513DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 5s Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak PD 5s 20 Steady State - 20 4.2 3.1 - 2.9 - 2.1 3.0 2.2 - 2.1 - 1.5 - 10 10 1.8 0.9 - 1.8 - 0.9 2.1 1.1 2.1 1.1 1.1 0.6 1.1 0.6 TJ, Tstg - 55 to 150 Temperature)b, c Unit V ± 12 IDM Pulsed Drain Current P-Channel Steady State A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 30 40 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V IGSS VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 70 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 70 °C P-Ch -5 VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 VGS = 4.5 V, ID = 3.1 A N-Ch ID(on) RDS(on) gfs VSD V nA µA A 0.065 0.075 VGS = - 4.5 V, ID = - 2.1 A P-Ch 0.130 0.155 VGS = 2.5 V, ID = 2.3 A N-Ch 0.115 0.134 VGS = - 2.5 V, ID = - 1.7 A P-Ch 0.215 0.260 VDS = 10 V, ID = 3.1 A N-Ch 8 VDS = - 10 V, ID = - 2.1 A P-Ch 5 IS = 0.9 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.9 A, VGS = 0 V P-Ch - 0.8 - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time tr td(off) tf N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.1 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.1 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 4 6 P-Ch 3 6 N-Ch 0.6 P-Ch 0.9 nC N-Ch 1.3 P-Ch 0.6 N-Ch 12 P-Ch 13 20 N-Ch 35 55 18 P-Ch 35 55 N-Ch 19 30 P-Ch 25 40 N-Ch 9 15 P-Ch 25 40 IF = 0.9 A, dI/dt = 100 A/µs N-Ch 40 80 IF = - 0.9 A, dI/dt = 100 A/µs P-Ch 40 80 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω trr N-Ch ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 Si5513DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 TC = - 55 °C VGS = 5 V thru 3 V 25 °C 8 I D - Drain Current (A) I D - Drain Current (A) 8 2.5 V 6 4 125 °C 6 4 2V 2 2 1.5 V 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 600 0.25 500 0.20 0.15 0.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.0 VGS = 2.5 V 0.10 VGS = 4.5 V 3.0 3.5 Ciss 400 300 Coss 200 0.05 100 0.00 0 Crss 0 2 4 6 8 10 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 3.1 A VDS = 10 V ID = 3.1 A 1.4 3 2 (Normalized) 4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 1 0 0 1 2 3 4 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 150 www.vishay.com 3 Si5513DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.15 ID = 3.1 A 0.10 0.05 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 50 0.2 40 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 0.2 - 0.4 30 20 10 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10-4 10-3 10-2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 Si5513DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 3.5 V VGS = 5 V thru 4 V TC = - 55 °C 8 25 °C 3V I D - Drain Current (A) I D - Drain Current (A) 8 6 2.5 V 4 2V 2 125 °C 6 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.4 4.0 600 VGS = 2.5 V 500 0.3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) VGS = 3.6 V 0.2 VGS = 4.5 V Ciss 400 300 200 0.1 Coss 100 Crss 0.0 0 0 2 4 6 8 10 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 20 www.vishay.com 5 Si5513DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 VGS = 4.5 V ID = 2.1 A VDS = 10 V ID = 2.1 A 1.4 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 3 2 1.0 0.8 1 0 0.0 1.2 0.5 1.0 1.5 2.0 2.5 0.6 - 50 3.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.40 10 0.35 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.1 A TJ = 150 °C TJ = 25 °C 0.30 0.25 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 50 0.4 0.3 40 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 6 100 125 150 0 10-4 10-3 10-2 10-1 1 10 100 600 Time (s) Single Pulse Power Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 Si5513DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71186. Document Number: 71186 S10-0547-Rev. G, 08-Mar-10 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000