SI5513DC-T1-E3

Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Channel P-Channel P Channel 20 −20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V 0.155 @ VGS = −4.5 V 0.260 @ VGS = −2.5 V ID (A) 4.2 3.1 −2.9 −2.2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5513DC-T1 Si5513DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State −20 "12 Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 Unit V 4.2 3.0 10 1.8 2.1 1.1 3.1 2.2 0.9 1.1 0.6 −55 to 150 260 −2.9 −2.1 −10 −1.8 2.1 1.1 −2.1 −1.5 −0.9 1.1 0.6 W _C A Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71186 S-42138—Rev. F, 15-Nov-04 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = − 20 V, VGS = 0 V, TJ = 70_C On-State On State Drain Currenta ID( ) D(on) VDS w 5 V, VGS = 4.5 V VDS p −5 V, VGS = −4.5 V VGS = 4.5 V, ID = 3.1 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = −4.5 V, ID = −2.1 A VGS = 2.5 V, ID = 2.3 A VGS = −2.5 V, ID = −1.7 A Forward Transconductancea gf fs VSD VDS = 10 V, ID = 3.1 A VDS = −10 V, ID = −2.1 A IS = 0.9 A, VGS = 0 V IS = −0.9 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 −10 0.065 0.130 0.115 0.215 8 5 0.8 −0.8 1.2 −1.2 0.075 0.155 0.134 0.260 S W 0.6 −0.6 1.5 −1.5 "100 "100 1 −1 5 −5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge otal Gate Charge Qg N-Channel N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.1 A P-Channel VDS = −10 V VGS = −4 5 V ID = −2 1 A V, 4.5 V, 2.1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W P Channel P-Channel VDD = −10 V, RL = 10 W V 10 ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 4.5 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 0.9 A, di/dt = 100 A/ms IF = −0.9 A, di/dt = 100 A/ms N-Ch P-Ch 4 3 0.6 0.9 1.3 0.6 12 13 35 35 19 25 9 25 40 40 18 20 55 55 30 40 15 40 80 80 ns 6 6 nC nC Gate-Source Gate Source Charge Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71186 S-42138—Rev. F, 15-Nov-04 2 Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 3 V 8 I D − Drain Current (A) 2.5 V I D − Drain Current (A) 8 10 TC = −55_C 25_C N−CHANNEL Transfer Characteristics 6 6 125_C 4 2V 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 0.30 r DS(on) − On-Resistance ( W ) 0.25 0.20 0.15 0.10 0.05 0.00 0 On-Resistance vs. Drain Current 600 500 C − Capacitance (pF) 400 300 200 100 0 Crss 0 4 Coss Ciss Capacitance VGS = 2.5 V VGS = 4.5 V 2 4 6 8 10 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 3.1 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.1 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 71186 S-42138—Rev. F, 15-Nov-04 www.vishay.com 3 Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.20 N−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) I S − Source Current (A) 0.15 ID = 3.1 A 0.10 TJ = 150_C TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 −0.0 −0.2 20 −0.4 10 −0.6 −50 −25 0 25 50 75 100 125 150 0 10−4 10−3 10−2 10−1 Time (sec) 1 10 100 600 TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 1000 10 100 600 www.vishay.com 4 Document Number: 71186 S-42138—Rev. F, 15-Nov-04 Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 N−CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 4 V 8 I D − Drain Current (A) 3.5 V 10 P−CHANNEL Transfer Characteristics TC = −55_C 3V I D − Drain Current (A) 8 25_C 6 2.5 V 4 2V 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 6 125_C 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 r DS(on) − On-Resistance ( W ) 600 500 C − Capacitance (pF) Ciss 400 300 200 100 0.0 0 2 4 6 8 10 ID − Drain Current (A) Document Number: 71186 S-42138—Rev. F, 15-Nov-04 0 0 Crss 4 Coss Capacitance VGS = 2.5 V 0.3 0.2 VGS = 3.6 V 0.1 VGS = 4.5 V 8 12 16 20 VDS − Drain-to-Source Voltage (V) www.vishay.com 5 Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 2.1 A rDS(on) − On-Resiistance (Normalized) 4 1.4 1.6 VGS = 4.5 V ID = 2.1 A P−CHANNEL On-Resistance vs. Junction Temperature 3 1.2 2 1.0 1 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.40 0.35 r DS(on) − On-Resistance ( W ) On-Resistance vs. Gate-to-Source Voltage ID = 2.1 A 0.30 0.25 0.20 0.15 0.10 0.05 I S − Source Current (A) TJ = 150_C TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 −0.1 −0.2 −50 10 Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−4 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) www.vishay.com 6 Document Number: 71186 S-42138—Rev. F, 15-Nov-04 Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 P−CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71186. Document Number: 71186 S-42138—Rev. F, 15-Nov-04 www.vishay.com 7