Si5902DC
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
ID (A)
0.085 at VGS = 10 V
± 3.9
0.143 at VGS = 4.5 V
± 3.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET®
D1
D2
1
S1
D1
G1
D1
S2
D2
G2
D2
G1
G2
Marking Code
CA XX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5902DC-T1-E3 (Lead (Pb)-free)
Si5902DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
± 2.9
± 2.8
± 2.1
± 10
1.8
0.9
2.1
1.1
1.1
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
V
± 3.9
IDM
Pulsed Drain Current
Soldering Recommendations (Peak
ID
- 55 to 150
Temperature)b, c
Unit
A
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Symbol
t5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71053
S10-0547-Rev. B, 08-Mar-10
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Si5902DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
1.0
Typ.
Max.
Unit
nA
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 85 °C
5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS 5 V, VGS = 10 V
a
V
µA
10
A
VGS = 10 V, ID = 2.9 A
0.072
0.085
VGS = 4.5 V, ID = 2.2 A
0.120
0.143
gfs
VDS = 15 V, ID = 2.9 A
20
VSD
IS = 0.9 A, VGS = 0 V
0.8
1.2
5
7.5
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.0
Turn-On Delay Time
td(on)
7
VDS = 15 V, VGS = 10 V, ID = 2.9 A
VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, Rg = 6
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
0.8
IF = 0.9 A, dI/dt = 100 A/µs
11
12
18
12
18
7
11
40
80
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 10 V thru 5 V
10
8
6
I D - Drain Current (A)
I D - Drain Current (A)
8
4V
4
2
6
4
TC = 125 °C
2
3V
25 °C
- 55 °C
0
0.0
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2
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
Document Number: 71053
S10-0547-Rev. B, 08-Mar-10
Si5902DC
Vishay Siliconix
0.20
400
0.15
300
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance ()
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 4.5 V
0.10
VGS = 10 V
200
Coss
100
0.05
Crss
0
0.00
0
2
4
6
8
0
10
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
1.8
VDS = 15 V
ID = 2.9 A
VGS = 10 V
ID = 2.9 A
1.6
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
18
6
4
2
1.4
1.2
1.0
0.8
0
0
1
2
3
4
0.6
- 50
5
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
10
150
RDS(on) - On-Resistance
I S - Source Current (A)
0.20
TJ = 150 °C
TJ = 25 °C
1
0.0
- 25
Qg - Total Gate Charge (nC)
0.15
ID = 2.9 A
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71053
S10-0547-Rev. B, 08-Mar-10
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Si5902DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
ID = 250 µA
0.0
Power (W)
VGS(th) Variance (V)
0.2
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10- 4
10- 3
10- 2
10 - 1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM -- TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10--4
10--3
10--2
10--1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10--4
10--3
10--2
10--1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71053.
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Document Number: 71053
S10-0547-Rev. B, 08-Mar-10
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Revision: 01-Jan-2022
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Document Number: 91000