SI5902BDC

New Product Si5902BDC Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V ID (A) 4a 4a Qg (Typ) 2 nC FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load switch for portable applications • DC/DC Converter RoHS COMPLIANT 1206-8 ChipFET® (Dual) 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 D2 Marking Code CE XXX G1 Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View Part # Code S2 N-Channel MOSFET Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 4a 3.8a 3.7b, c 2.6b, c 10 2.6 1.3b, c 3.12 2.0 1.5b, c 0.8b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 70 33 Maximum 85 40 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 120 °C/W. Document Number: 70415 S-71326-Rev. A, 02-Jul-07 www.vishay.com 1 New Product Si5902BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 3.1 A VGS = 4.5 V, ID = 1 A VDS = 15 V, ID = 3.1 A Min 30 Typ Max Unit V 27 -5 1.5 3 ± 100 1 5 10 0.053 0.081 5 0.065 0.100 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 220 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 3.6 A VDS = 15 V, VGS = 4.5 V, ID = 3.6 A f = 1 MHz VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω 50 25 4.5 2 0.7 0.7 3 15 80 12 25 4 VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω 12 10 5 TC = 25 °C IS = 2.6 A, VGS = 0 V 0.8 30 IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C 20 23 7 25 120 20 40 8 20 15 10 2.6 10 1.2 50 40 ns Ω 7 3 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70415 S-71326-Rev. A, 02-Jul-07 New Product Si5902BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 16 I D - Drain Current (A) VGS = 10 thru 6 V 5V I D - Drain Current (A) 4 12 3 TC = 25 °C 2 TC = 125 °C 1 8 4V 4 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 300 Transfer Characteristics r DS(on) - On-Resistance (Ω) 0.16 C - Capacitance (pF) 250 Ciss 200 0.12 VGS = 4.5 V 150 0.08 VGS = 10 V 0.04 100 Coss 50 Crss 0 5 10 15 20 25 30 0.00 0 5 10 ID - Drain Current (A) 15 20 0 VDS - Drain-to-Source Voltage (V) On Resistance vs. Drain Current 10 VDS = 15 V, ID = 3.6 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance 1.6 1.8 Capacitance VGS = 10 V, 4.5 V ID = 3.1 A 1.4 (Normalized) 6 1.2 4 VDS = 24 V, ID = 3.6 A 1.0 2 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Document Number: 70415 S-71326-Rev. A, 02-Jul-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5902BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.20 ID = 3.1 A r DS(on) - On-Resistance (Ω) 0.16 I S - Source Current (A) 0.12 25 °C TJ = 150 °C TJ = 25 °C 0.08 125 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.04 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp 2.4 50 rDS(on) vs. VGS vs. Temperature 2.2 ID = 250 µA 2.0 Power (W) VGS(th) (V) 40 30 1.8 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (sec) Threshold Voltage 10 *Limited by rDS(on) 100 µs Single Pulse Power I D - Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms 1 s, 10 s dc 0.01 0.01 *VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 70415 S-71326-Rev. A, 02-Jul-07 New Product Si5902BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 5 3 ID - Drain Current (A) 4 Package Limited 3 Power Dissipation (W) 2 2 1 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70415 S-71326-Rev. A, 02-Jul-07 www.vishay.com 5 New Product Si5902BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70415. www.vishay.com 6 Document Number: 70415 S-71326-Rev. A, 02-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1