SI7392ADP-T1-E3

Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion - Notebook - Server G 4 D 8 D 7 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • New Low Thermal ResistancePowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • Complaint to RoHS Directive 2002/95/EC G D 6 D 5 Bottom View Ordering Information: Si7392ADP-T1-E3 (Lead (Pb)-free) Si7392ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 30 ± 20 30 30 Unit 17.5b, c 14.0b, c 50 30 A 4.5b, c 25 30 27.5 17.5 A 5b, c 3.2b, c - 55 to 150 260 V mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t 10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC 3.5 4.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 www.vishay.com 1 Si7392ADP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 30 ID = 1 µA to 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS  5 V, VGS = 10 V VGS = 10 V, ID = 12.5 A 1.0 2.5 30 0.0075 VGS = 4.5 V, ID = 10 A 0.009 0.0115 VDS = 15 V, ID = 12.5 A 46 360 pF 150 VDS = 15 V, VGS = 10 V, ID = 12.5 A 25 38 12 18 VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 3.7 f = 1 MHz 1.9 2.9 16 25 nC 3.1 VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  75 32 tf 8 15 td(on) 8 15 tr  1465 VDS = 15 V, VGS = 0 V, f = 1 MHz 50 td(off) µA S 21 td(off) nA A 0.006 td(on) tr -6 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tf 35 55 23 35 8 15  ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 30 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. 50 IS = 2.7 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 26 40 nC 19 30 13 ns 13 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 Si7392ADP Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.2 50 VGS = 10 V thru 4 V 1.0 30 20 25 °C °C I D - Drain Current (A) I D - Drain Current (A) 40 3V 0.8 0.6 TC = 125 °C 0.4 10 0.2 - 55 °C 0.3 0.6 0.9 1.2 0.0 0.0 1.5 1.0 3.0 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.011 1800 0.010 1500 0.009 VGS = 4.5 V 0.008 0.007 VGS = 10 V Ciss 1200 900 600 Coss Crss 300 0.006 0.005 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 12 24 30 Capacitance 10 1.8 ID = 12.5 A ID = 11 A 1.6 8 VDS = 15 V VDS = 20 V 4 2 1.4 (Normalized) 6 R DS(on) - On-Resistance VDS = 10 V 0 0.0 18 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage VGS - Gate-to-Source Voltage (V) 2.0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0 0.0 VGS = 10 V 1.2 VGS = 4.5 V 1.0 0.8 5.2 10.4 15.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 20.8 26.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7392ADP Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.05 I S - Source Current (A) 10.000 R DS(on) - Drain-to-Source On-Resistance (Ω) 100.000 TJ = 150 °C 1.000 0.100 TJ = 25 °C 0.010 0.001 0.0 0.04 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 200 ID = 1 µA 0.2 ID = 5 mA Power (W) VGS(th) Variance (V) 160 0.0 - 0.2 - 0.4 120 80 - 0.6 40 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1 10 100 I D - Drain Current (A) Limited by R DS(on)* 1 ms 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 Si7392ADP Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 I D - Drain Current (A) 40 30 Limited by Package 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 35 2.5 28 2.0 21 1.5 Power (W) Power (W) Current De-Rating* 14 1.0 0.5 7 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Junction-to-Case Power Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 www.vishay.com 5 Si7392ADP Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73461. www.vishay.com 6 Document Number: 73461 S11-0212-Rev. E, 14-Feb-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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