SI7392DP-T1-E3

Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion - Notebook - Server S 3 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • Complaint to RoHS Directive 2002/95/EC D G 7 D 6 D 5 Bottom View S Ordering Information: Si7392DP-T1-E3 (Lead (Pb)-free) Si7392DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID a Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single-Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 70 °C 15 9 7 ± 50 1.5 30 45 mJ 5 1.8 3.2 1.1 TJ, Tstg Operating Junction and Storage Temperature Range A 4.1 EAS PD V 12 IDM Pulsed Drain Current Unit - 55 to 150 Soldering Recommendations (Peak Temperature)b, c W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 20 25 53 70 3.5 4.5 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72165 S11-0212-Rev. G, 14-Feb-11 www.vishay.com 1 Si7392DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V µA 40 A VGS = 10 V, ID = 15 A 0.008 0.00975 VGS = 4.5 V, ID = 13 A 0.011 0.01375 gfs VDS = 15 V, ID = 15 A 40 VSD IS = 4.1 A, VGS = 0 V 0.75 1.1 10 15 Ω S V b Dynamic Qg Total Gate Charge VDS = 15 V, VGS = 4.5 V, ID = 15 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.6 Gate Resistance Rg 1.6 2.7 td(on) 15 25 7 15 46 70 9 17 30 60 Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.5 IF = 2.7 A, dI/dt = 100 A/µs Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 30 20 TC = 125 °C 10 10 25 °C - 55 °C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72165 S11-0212-Rev. G, 14-Feb-11 Si7392DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1800 Ciss 1500 0.024 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.030 0.018 VGS = 4.5 V 0.012 1200 900 Coss 600 VGS = 10 V 0.006 Crss 300 0.000 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 12 30 Capacitance 6 1.8 VDS = 15 V ID = 15 A 5 VGS = 10 V ID = 15 A 1.6 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 4 3 2 1 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 - 50 15 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.040 0.032 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.0 - 25 Qg - Total Gate Charge (nC) 50 I S - Source Current (A) 18 ID = 15 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72165 S11-0212-Rev. G, 14-Feb-11 10 www.vishay.com 3 Si7392DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 200 0.4 0.2 Power (W) V GS(th) Variance (V) 160 ID = 250 µA 0.0 - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TC = 25 °C Single Pulse 0.01 0.1 1 * VGS DC 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10- 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72165 S11-0212-Rev. G, 14-Feb-11 Si7392DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72165. Document Number: 72165 S11-0212-Rev. 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