SI7842DP-T1-E3

Si7842DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Schottky • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile SCHOTTKY PRODUCT SUMMARY • 100 % Rg Tested VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 3.0 APPLICATIONS • Bus and Logic DC-DC PowerPAK SO-8 S1 6.15 mm D2 D1 5.15 mm 1 G1 2 S2 3 G2 4 D1 8 Schottky Diode G1 D1 G2 7 D2 6 D2 5 S2 N-Channel MOSFET S1 N-Channel MOSFET Bottom View Ordering Information: Si7842DP-T1-E3 (Lead (Pb)-free) Si7842DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 70 °C Operating Junction and Storage Temperature Range ID IDM IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)b,c 10 s Steady State Unit 30 ± 20 V 10 6.0 6.3 5.0 A 30 2.9 3.5 2.2 1.1 1.4 0.9 W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC MOSFET Typical Maximum 26 35 60 85 3.9 5.5 Schottky Typical Maximum 26 35 60 85 3.9 5.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71617 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 1 Si7842DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min. VGS(th) VDS = VGS, ID = 250 µA 0.8 IGSS VDS = 0 V, VGS = ± 20 V Typ.b Max. Unit 2.4 V ± 100 nA Static Gate Threshold Voltage Gate-Body Leakage VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea ID(on) Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 VDS = 5 V, VGS = 10 V RDS(on) gfs 2000 20 A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A VSD IS = 1 A, VGS = 0 V µA 22 Ω S Ch-1 0.8 1.2 Ch-2 0.47 0.5 13 20 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 7.5 A 2.7 0.5 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs 1.2 3.2 8 16 10 20 21 40 10 20 Ch-1 40 80 Ch-2 32 70 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Condition Typ. Max. IF = 1.0 A Min. 0.47 0.50 IF = 1.0 A, TJ = 125 °C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100 °C 0.7 10 Vr = – 30 V, TJ = 125 °C 3.0 20 Vr = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71617 S09-0227-Rev. D, 09-Feb-09 Si7842DP Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 3V VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 25 °C 2V - 55 °C 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1000 0.032 800 VGS = 4.5 V 0.024 VGS = 10 V 0.016 3.0 Ciss 600 400 Coss Crss 200 0.008 0 0.000 0 4 8 12 16 0 20 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 7.5 A VDS = 15 V ID = 7.5 A 1.4 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 6 4 1.2 1.0 0.8 2 0 0 3 6 Q 9 - Total Gate Charge (nC) Gate Charge Document Number: 71617 S09-0227-Rev. D, 09-Feb-09 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7842DP Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.2 80 ID = 250 μA 0.0 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 1 0.1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 60 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71617 S09-0227-Rev. D, 09-Feb-09 Si7842DP Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 TJ = 150 °C 1 I F - Forward Current (A) I R - Reverse Current (mA) 20 10 30 V 0.1 24 V 0.01 TJ = 25 °C 0.001 0.0001 0 25 50 75 100 TJ - Temperature (°C) 125 1 0.0 150 Reverse Current vs. Junction Temperature 0.3 0.6 0.9 1.2 VF - Forward Voltage Drop (V) 1.5 Forward Voltage Drop 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71617. Document Number: 71617 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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