SI7860ADP-T1-GE3

Si7860ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested PowerPAK SO-8 APPLICATIONS S 6.15 mm • Buck Converter - High Side or Low Side • Synchronous Rectifier - Secondary Rectifier 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7860ADP-T1-E3 (Lead (Pb)-free) Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TA = 25 °C TA = 70 °C a ID IDM IS IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s 16 13 4.1 4.8 3.1 Steady State 30 ± 20 11 8 ± 50 1.5 35 60 1.8 1.1 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) Symbol a t ≤ 10 s Steady State Steady State RthJA RthJC Typical 21 56 1.9 Maximum 26 70 2.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72651 S09-0272-Rev. D, 16-Feb-09 www.vishay.com 1 Si7860ADP Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Gate Threshold Voltage Drain-Source On-State Resistancea 3.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) 40 A VGS = 10 V, ID = 16 A 0.0079 0.0095 VGS = 4.5 V, ID = 14 A 0.0105 0.0125 Forward Transconductancea gfs VDS = 15 V, ID = 16 A 60 Diode Forward Voltagea VSD IS = 3 A, VGS = 0 V 0.70 1.1 13 18 Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 16 A 0.5 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr S V nC 5 td(on) Turn-On Delay Time Ω 4.0 Rg Gate Resistance µA IF = 3 A, dI/dt = 100 A/µs 1.7 3.2 18 27 12 18 46 70 19 30 40 70 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 30 20 TC = 125 °C 10 10 25 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 - 55 °C 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72651 S09-0272-Rev. D, 16-Feb-09 Si7860ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2500 0.012 2000 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.015 VGS = 10 V 0.009 0.006 Ciss 1500 1000 Coss 500 0.003 Crss 0 0.000 0 10 20 30 40 0 50 6 12 30 Capacitance 6 2.00 VDS = 15 V ID = 16 A 5 VGS = 10 V ID = 16 A 1.75 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 4 3 2 1 1.50 1.25 1.00 0.75 0 0.50 0 4 8 12 16 20 - 50 - 25 Gate Charge 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.040 R DS(on) - On-Resistance (Ω) 60 TJ = 150 °C 10 TJ = 25 °C 0.032 0.024 0.016 ID = 16 A 0.008 0.000 1 0.00 0 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 18 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72651 S09-0272-Rev. D, 16-Feb-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7860ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 200 ID = 250 µA 160 Power (W) V GS(th) Variance (V) 0.3 0.0 120 - 0.3 80 - 0.6 40 - 0.9 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 0.001 10 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 0.01 0.01 TC = 25 °C Single Pulse 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72651 S09-0272-Rev. D, 16-Feb-09 Si7860ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72651. Document Number: 72651 S09-0272-Rev. 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