SI7860DP-T1-E3

Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance • PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS S 6.15 mm • Buck Converter - High Side or Low Side • Synchronous Rectifier - Secondary Rectifier 5.15 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D 5 G Bottom View S Ordering Information: Si7860DP-T1 Si7860DP-T1-E3 (Lead (Pb)-free) Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a IDM IS Pulsed Drain Current Continuous Source Current (Diode Continuous) Avalanche Current Single Pulse Avalanche Energy a L = 0.1 mH TA = 25 °C TA = 70 °C Maximum Power Dissipationa ID Steady State 30 ± 20 11 8 ± 50 18 15 4.1 PD Unit V A 1.5 IAS EAS TJ, Tstg Operating Junction and Storage Temperature Range 10 s 30 45 mJ 5 3.2 1.8 1.1 - 55 to 150 Soldering Recommendations (Peak Temperature)b,c 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) Symbol a t ≤ 10 s Steady State Steady State RthJA RthJC Typical 20 56 1.8 Maximum 25 70 2.3 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 www.vishay.com 1 Si7860DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 5 40 A VGS = 10 V, ID = 18 A 0.0066 0.008 VGS = 4.5 V, ID = 15 A 0.0090 0.011 gfs VDS = 15 V, ID = 18 A 60 IS = 3 A, VGS = 0 V 0.70 1.1 13 18 Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 18 A 0.5 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr S V nC 4.0 Rg Rise Time Ω 5 td(on) Turn-On Delay Time µA VSD Dynamicb Total Gate Charge Gate Resistance V nA VDS = 30 V, VGS = 0 V VDS ≥ 5 V, VGS = 10 V RDS(on) 3.0 ± 100 IF = 3 A, dI/dt = 100 A/µs 1.7 3.2 18 27 12 18 46 70 19 30 40 70 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 30 20 TC = 125 °C 3V 10 10 25 °C - 55 °C 0 0 www.vishay.com 2 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 Si7860DP Vishay Siliconix 0.015 2500 0.012 2000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 4.5 V 0.009 VGS = 10 V 0.006 Ciss 1500 1000 Coss 0.003 500 0.000 Crss 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 12 30 Capacitance 6 2.00 VDS = 15 V ID = 16 A 5 VGS = 10 V ID = 16 A 1.75 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 4 3 2 1 1.50 1.25 1.00 0.75 0 0 4 8 12 16 0.50 - 50 20 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.040 RDS(on) - On-Resistance (Ω) 60 TJ = 150 °C 10 TJ = 25 °C 0.032 0.024 0.016 ID = 16 A 0.008 0.000 1 0.00 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 18 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7860DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 200 ID = 250 µA 160 Power (W) V GS(th) Variance (V) 0.3 0.0 120 - 0.3 80 - 0.6 40 - 0.9 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.1 Time (s) 0.01 10 1 Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 4. Surface Mounted 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71854. www.vishay.com 4 Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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