SI9434BDY-T1-E3

Si9434BDY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (:) ID (A) 0.040 at VGS = - 4.5 V - 6.3 0.055 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY-T1-E3 (Lead (Pb)-free) Si9434BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.5 - 5.0 - 3.6 - 20 - 2.3 - 1.2 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.3 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t d 10 s Steady State Steady State RthJA RthJF Typical Maximum 45 50 80 95 20 24 Unit °C/W Notes: a. Surface Mounted on FR4 board, t d 10 s. Document Number: 73050 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 1 Si9434BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 μA - 0.45 Typ.a Max. Unit - 1.5 V nA Static Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistanceb ± 100 -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C -5 b VDS d- 5 V, VGS = - 4.5 V - 20 VDS d- 5 V, VGS = - 2.5 V -5 μA A VGS = - 4.5 V, ID = - 6.3 A 0.033 0.040 VGS = - 2.5 V, ID = - 5.1 A 0.044 0.055 gfs VDS = - 9 V, ID = - 6.3 A 10 VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.2 12 18 VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A 1.7 RDS(on) Forward Transconductanceb Diode Forward Voltage VDS = 0 V, VGS = ± 8 V VDS = - 20 V, VGS = 0 V : S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 7 td(on) 15 Turn-On Delay Time 3.5 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC : 25 VDD = - 10 V, RL = 10 : ID # - 1 A, VGEN = - 4.5 V, Rg = 6 : 45 75 80 130 60 100 IF = - 2.3 A, dI/dt = 100 A/μs 40 70 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width d 300 μs, duty cycle d 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 2.5 V 16 I D - Drain Current (A) 12 8 I D - Drain Current (A) 16 2V 12 8 1.5 V 4 4 TC = 125 °C 25 °C - 55 °C 1V 0 0.0 www.vishay.com 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 73050 S09-0704-Rev. B, 27-Apr-09 Si9434BDY Vishay Siliconix 0.15 2500 0.12 2000 C - Capacitance (pF) R DS(on) - On-Resistance (:) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 1.8 V 0.09 0.06 VGS = 2.5 V 1500 Ciss 1000 500 0.03 Coss VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 12 16 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VGS = 4.5 V ID = 6.3 A VDS = 10 V ID = 6.3 A 1.4 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 5 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 3 6 9 12 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.15 20 RDS(on) - On-Resistance (:) TJ = 150 °C I S - Source Current (A) 4 10 0.12 ID = 6.3 A 0.09 0.06 0.03 TJ = 25 °C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73050 S09-0704-Rev. B, 27-Apr-09 5 www.vishay.com 3 Si9434BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 0.4 0.3 40 0.2 30 Power (W) VGS(th) Variance (V) ID = 250 μA 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 1 ms 10 ms ID(on) Limited 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 0.01 0.1 * VGS DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 4. Surface Mounted 10 - 2 10 - 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73050 S09-0704-Rev. B, 27-Apr-09 Si9434BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73050. Document Number: 73050 S09-0704-Rev. 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