SIA414DJ-T1-GE3

SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.011 at VGS = 4.5 V 12 0.013 at VGS = 2.5 V 12 0.016 at VGS = 1.8 V 12 0.022 at VGS = 1.5 V 12 0.041 at VGS = 1.2 V 12 VDS (V) 8 • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 19 nC APPLICATIONS • Load Switch for Portable Applications D PowerPAK SC-70-6L-Single Marking Code 1 D ACX 2 Part # code D XXX 6 D 5 S D 2.05 mm S G Lot Traceability and Date code 3 G Ordering Information: SiA414DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA414DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) 2.05 mm 4 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 8 ±5 12a 12a 12a, b, c 11.6b, c 40 12a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) IS PD TJ, Tstg d, e Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 73954 S12-1141-Rev. C, 21-May-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA414DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) a gfs Forward Transconductance V 9 mV/°C -3 0.35 0.8 V ± 100 nA VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 4.5 V 20 µA A VGS 4.5 V, ID = 9.7 A 0.009 0.011 VGS 2.5 V, ID = 9 A 0.011 0.013 VGS 1.8 V, ID = 8.1 A 0.013 0.016 VGS 1.5 V, ID = 4.5 A 0.016 0.022 VGS 1.2 V, ID = 2.4 A 0.027 0.041 VDS = 4 V, ID = 9.7 A 50  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1800 VDS = 4 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time tf Fall Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 21 32 19 29 VDS = 4 V, VGS = 4.5 V, ID = 10 A 2.5 f = 1 MHz 2.5 nC 6.5 12 VDD = 4 V, RL = 0.4  ID  10 A, VGEN = 4.5 V, Rg = 1  td(on) Turn-on Delay Time pF 450 VDS = 4 V, VGS = 5 V, ID = 10 A td(on) Turn-on Delay Time 650 VDD = 4 V, RL = 0.4  ID  10 A, VGEN = 5 V, Rg = 1   20 10 15 65 100 20 30 10 15 10 15 35 55 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 12 40 IS = 10 A, VGS 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 40 80 ns Body Diode Reverse Recovery Charge Qrr 20 40 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 12 28 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For more information please contact: pmostechsupport@vishay.com Document Number: 73954 S12-1141-Rev. C, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA414DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 40 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 1.5 V 24 16 6 TC = 25 °C 4 TC = 125 °C 2 8 1V 0 0.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) TC = - 55 °C 0 0.0 2.0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.06 2500 0.05 2000 VGS = 1.5 V Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.2 V 0.04 0.03 VGS = 1.8 V 0.02 1500 1000 Coss 500 0.01 Crss VGS = 2.5 V VGS = 4.5 V 0 0 0 8 16 24 ID - Drain Current (A) 32 40 0 2 4 6 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.5 R DS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 8 4 VDS = 4 V 3 VDS = 6.4 V 2 1 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73954 S12-1141-Rev. C, 21-May-12 18 21 ID = 9.7 A 1.4 VGS = 1.8 V, 2.5 V, 4.5 V 1.3 1.2 VGS = 1.5 V 1.1 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For more information please contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA414DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.040 TJ = 150 °C TJ = 25 °C 10 1 0.0 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 9.7 A 0.032 0.024 0.016 125 °C 0.008 25 °C 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 30 0.8 25 0.7 ID = 250 µA 20 Power (W) V GS(th) (V) 0.6 0.5 15 0.4 10 0.3 5 0.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) 100 Limited by R DS(on)* I D - Drain Current (A) 100 µs 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For more information please contact: pmostechsupport@vishay.com Document Number: 73954 S12-1141-Rev. C, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA414DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 20 35 Power Dissipation (W) I D - Drain Current (A) 30 25 20 Package Limited 15 10 15 10 5 5 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73954 S12-1141-Rev. C, 21-May-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA414DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 0.1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73954. www.vishay.com 6 For more information please contact: pmostechsupport@vishay.com Document Number: 73954 S12-1141-Rev. C, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000