SIA425EDJ-T1-GE3

SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection 2400 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.9 nC APPLICATIONS S • Load Switch and Battery Switch for Portable Devices PowerPAK SC-70-6L-Single 1 D 2 Marking Code D 3 6 5 2.05 mm Part # code R XXX Lot Traceability and Date code S D S G BMX G D 2.05 mm 4 D Ordering Information: SiA425EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V - 4.5a - 2.4b, c 15.6 10 IS PD Unit - 4.5a - 4.5a - 4.5a, b, c - 4.5a, b, c - 15 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 20 ± 12 2.9b, c 1.8b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 32 6 Maximum 43 8 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 www.vishay.com 1 SiA425EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) ID = - 250 µA VDS = VGS, ID = - 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance V - 15 mV/°C 2.6 -1 V VDS = 0 V, VGS = ± 4.5 V ±4 µA VDS = 0 V, VGS = ± 12 V ±8 mA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 0.4 - 10 A VGS = - 4.5 V, ID = - 4.2 A 0.050 0.06 VGS = - 3.6 V, ID = - 4.0 A 0.053 0.065 VGS = - 2.5 V, ID = - 3.6 A 0.065 0.080 VGS = - 1.8 V, ID = - 2 A 0.091 0.120 gfs VDS = - 10 V, ID = - 4.2 A 15 Rg f = 1 MHz RDS(on) µA Ω S Dynamicb Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) 1.2 6 12 1.2 2.4 5 10 14 28 tf 10 20 td(on) 0.5 1 1.4 2.8 20 40 10 20 VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) tf kΩ µs Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 4.5 - 15 IS = - 4.5 A, VGS = 0 V IF = - 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.9 - 1.2 V 20 40 ns 11 20 nC 12 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-1 10 10-2 TJ = 25 °C 10-3 IG - Gate Current (A) IG - Gate Current (mA) 8 6 4 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 2 10-8 10-9 0 0 3 6 9 12 15 0 18 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 5 15 VGS = 5 V thru 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 2 V 9 6 3 2 TC = 25 °C VGS = 1.5 V 3 1 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.4 VDS - Drain-to-Source Voltage (V) 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 0.15 VGS = 1.8 V 1.4 0.12 0.09 VGS = 2.5 V VGS = 3.6 V 0.06 VGS = 4.5 V 1.3 (Normalized) R DS(on) - On-Resistance R DS(on) - On-Resistance (Ω) 0.8 VGS = 4.5 V, 3.6 V, 2.5 V; ID = 4.2 A 1.2 1.1 VGS = 1.8 V; ID = 2 A 1.0 0.9 0.03 0.8 0.00 0 3 6 9 12 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 15 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.15 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 0.12 ID = 2 A; TJ = 125 °C ID = 4.2 A; TJ = 125 °C 0.09 ID = 2 A; TJ = 25 °C 0.06 ID = 4.2 A; TJ = 25 °C 0.03 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.9 0.8 16 ID = 250 µA Power (W) VGS(th) (V) 0.7 0.6 12 8 0.5 4 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 15 10 5 3 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 www.vishay.com 5 SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65575. www.vishay.com 6 Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1