SIA907EDJT-T1-GE3

SiA907EDJT Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.057 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V ID (A) - 4.5a - 4.5a Qg (Typ.) 4.9 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced Thin PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 1500 V HBM • High Speed Switching • Compliant to RoHS Directive 2002/95/EC Thin PowerPAK SC-70-6L-Dual APPLICATIONS • Charger Switch, Load Switch for Portable Devices S1 S2 • Battery Management 1 S1 D1 6 D1 3 D2 5 G2 S2 D2 4 2 G1 Marking Code 0.6 mm Part # code DMX XXX Lot Traceability and Date code G1 G2 2.05 mm 2.05 mm D1 Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 4.5a - 4.5a - 4.5a, b, c - 3.8b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. Document Number: 67874 S11-0862-Rev. A, 02-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.6 A VGS = - 2.5 V, ID = - 1.5 A VDS = - 10 V, ID = - 3.6 A VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A f = 1 MHz VDD = - 10 V, RL = 2.7  ID  - 3.7 A, VGEN = - 4.5 V, Rg = 1  1.4 - 15 0.047 0.075 11 0.057 0.095 - 0.5 - 20 - 14 2.5 - 1.4 ± 0.5 ± 10 -1 - 10 A  S µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb 15 7.1 1.3 2.1 7 13 15 30 10 5 23 11 nC 14 25 30 60 15 10 20 60 20 - 4.5 - 15  ns VDD = - 10 V, RL = 2.7  ID  - 3.7 A, VGEN = - 10 V, Rg = 1  10 30 10 TC = 25 °C IS = - 3.7 A, VGS = 0 V - 0.9 15 IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C 6 8.5 6.5 A V ns nC ns - 1.2 30 12 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.5 10-2 10-3 0.4 10-4 IG - Gate Current (mA) TJ = 150 °C IG - Gate Current (A) 0.3 TJ = 25 °C 0.2 10-5 10-6 TJ = 25 °C 10-7 10-8 0.1 10-9 0.0 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) 10-10 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 15 VGS = 10 V thru 3 V 12 I D - Drain Current (A) VGS = 2.5 V I D - Drain Current (A) 4 5 Gate Current vs. Gate-to-Source Voltage 9 VGS = 2 V 3 6 2 TC = 25 °C 1 3 VGS = 1.5 V 0 0.0 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 1000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 800 0.15 C - Capacitance (pF) Ciss 600 0.10 VGS = 2.5 V 400 0.05 VGS = 4.5 V 200 Coss Crss 0.00 0 3 6 9 12 15 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 67874 S11-0862-Rev. A, 02-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID = 4.7 A 8 VDS = 5 V 1.5 1.4 R DS(on) - On-Resistance 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 ID = 3.6 A VGS = 4.5 V VGS - Gate-to-Source Voltage (V) 6 VDS = 10 V VDS = 16 V VGS = 2.5 V 4 2 0 0 3 6 9 12 15 18 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 On-Resistance vs. Junction Temperature 0.20 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 0.15 ID = 3.6 A; TJ = 125 °C 0.10 ID = 1 A; TJ = 125 °C ID = 1 A; TJ = 25 °C ID = 3.6 A; TJ = 25 °C 10 TJ = 150 °C 1 TJ = 25 °C 0.05 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 On-Resistance vs. Gate-to-Source Voltage 20 0.8 15 0.7 Power (W) ID = 250 μA VGS(th) (V) 0.6 10 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 4 Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* 10 ID - Drain Current (A) 100 μs 1 1 ms 10 ms 0.1 100 ms 1s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA = 25 °C Single Pulse Safe Operating Area, Junction-to-Ambient 12 8 10 ID - Drain Current (A) 8 6 Package Limited 4 Power Dissipation (W) 6 4 2 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67874 S11-0862-Rev. A, 02-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67874. www.vishay.com 6 Document Number: 67874 S11-0862-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix CASE OUTLINE for PowerPAK® SC70T D Terminal #1 b Pin 3 E L A e Pin 2 Pin 1 L b Pin 3 Pin 2 e Pin 1 K E3 K4 E2 E2 T E4 D3 D2 D2 D2 Topside View C A1 K E2 Z Z Side View Detail Z Pin 4 Pin 5 Pin 6 K3 K2 K1 Backside View of Single A Pin 4 Pin 5 Pin 6 K2 K1 Backside View of Dual K2 SINGLE PAD DIM. MIN. 0.525 0.00 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.175 0.275 0.375 MIN. 0.0206 0.00 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES NOM. 0.024 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.011 MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0.00 0.23 0.15 1.98 0.513 1.98 0.85 DUAL PAD MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0.00 0.009 0.006 0.078 0.020 0.078 0.033 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 0.081 0.037 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.085 0.041 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L T ECN: C09-0671-Rev. A, 07-Sep-09 DWG: 5994 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.007 0.015 0.175 0.05 0.275 0.10 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Document Number: 65370 07-Sep-09 www.vishay.com 1 K Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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