SIA814DJ-T1-GE3

New Product SiA814DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.061 at VGS = 10 V ID (A)a 4.5 0.072 at VGS = 4.5 V 4.5 3.2 nC 0.110 at VGS = 2.5 V 4.5 VDS (V) RDS(on) (Ω) 30 • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 30 0.56 at 1 A 2 RoHS COMPLIANT APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch for Portable Devices PowerPAK SC-70-6 Dual D K 1 A Marking Code 2 NC GBX 3 D K 0.75 mm K Part # code Lot Traceability and Date code G 5 2.05 mm S G XXX D 6 2.05 mm S 4 A N-Channel MOSFET Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS ± 12 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C IS IF Average Forward Current (Schottky) IFM Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) Soldering Recommendations (Peak Temperature)d, e Document Number: 68672 S-81176-Rev. A, 26-May-08 3.4b, c 15 A 4.5a 1.6b, c 2b 3 6.5 5 1.9b, c PD 1.2b, c 6.8 TC = 70 °C 4.3 TA = 25 °C 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range 4.3b, c TA = 25 °C TC = 25 °C Maximum Power Dissipation (Schottky) 4.5a TC = 70 °C TA = 70 °C V 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit 30 TJ, Tstg 1.0b, c - 55 to 150 260 W °C www.vishay.com 1 New Product SiA814DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g Maximum Junction-to-Case (Drain) (Schottky) Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. g. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 tr mV/°C - 3.7 0.6 1.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 3.3 A 15 0.061 VGS = 4.5 V, ID = 3.1 A 0.059 0.072 VGS = 2.5 V, ID = 0.9 A 0.090 0.110 VDS = 15 V, ID = 3.3 A 9 340 VDS = 10 V, VGS = 0 V, f = 1 MHz 45 pF 25 VDS = 15 V, VGS = 10 V, ID = 4.3 A VDS = 15 V, VGS = 4.5 V, ID = 4.3 A 7 11 3.2 5 0.9 VDD = 15 V, RL = 4.3 Ω ID ≅ 3.5 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2 10 15 10 15 15 25 10 15 5 10 tf nC 0.8 f = 1 MHz tf tr Ω S td(on) td(off) µA A 0.050 td(on) td(off) V 27 VDD = 15 V, RL = 4.3 Ω ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω 12 20 15 25 10 15 ns Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4.5 15 IS = 3.5 A, VGS = 0 V IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 12 20 ns 6 15 nC 8 ns 4 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 0.5 A Min. Typ. Max. 0.37 0.45 IF = 0.5 A, TJ = 125 °C 0.31 0.37 IF = 1 A 0.46 0.56 IF = 1 A, TJ = 125 °C 0.41 0.50 Vr = 30 V 0.025 0.1 Vr = 30 V, TJ = 85 °C 0.6 6.00 Vr = 15 V 35 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 3 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 15 5 VGS = 10 thru 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 2 V 3 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 500 400 0.130 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) 0.155 0.105 0.080 VGS = 4.5 V Ciss 300 200 100 0.055 Coss VGS = 10 V Crss 0 0.030 0 3 6 9 12 0 15 10 20 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 4.3 A VGS = 10 V, 4.5 V ID = 3.3 A VDS = 15 V 1.6 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) TC = - 55 °C 0 0.0 VDS = 24 V 6 4 2 1.4 VGS = 2.5 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.20 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.3 A 10 TJ = 150 °C 0.15 0.10 TJ = 125 °C 0.05 TJ = 25 °C TJ = 25 °C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 20 1.4 1.3 1.2 15 Power (W) VGS(th) (V) 1.1 1.0 0.9 ID = 250 µA 10 0.8 5 0.7 0.6 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 5 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 10 Power Dissipation (W) I D - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 7 New Product SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 VR = 30 V 10-1 VR = 10 V 10-2 10-3 1 TJ = 150 °C TJ = 25 °C 10-4 10-5 - 50 - 25 0 25 50 100 75 125 0.1 0.0 150 0.1 0.2 T J - Junction Temperature (°C) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop C T - Junction Capacitance (pF) 250 200 150 100 50 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 8 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68672. Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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