SIDR608DP-T1-RE3

SiDR608DP www.vishay.com Vishay Siliconix N-Channel 45 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 • TrenchFET® Gen IV power MOSFET D 8 • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss S • 100 % Rg and UIS tested 6.1 5m m 1 3 4 S G m 5m 5.1 Top View 1 2 S S APPLICATIONS Bottom View D • Synchronous rectification PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • High power density DC/DC 45 0.00120 0.00180 50.5 208 Single • Motor drive control G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR608DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche Energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 45 +20, -16 208 166 51 b, c 40.8 b, c 400 94.5 5.6 b, c 50 125 104 66.6 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 15 20 Maximum junction-to-ambient b, f 0.9 1.2 Maximum junction-to-case (drain) Steady state RthJC °C/W 1.1 1.4 Maximum junction-to-case (source) Steady state RthJC Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. Package limited S19-0390-Rev. A, 29-Apr-2019 Document Number: 77086 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 45 - - VDS/TJ ID = 10 mA - 29 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -5.8 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 45 V, VGS = 0 V - - 1 VDS = 45 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 50 - - VGS = 10 V, ID = 20 A - 0.00100 0.00120 VGS = 4.5 V, ID = 20 A - 0.00136 0.00180 VDS = 10 V, ID = 20 A - 120 - μA A  S Dynamic b Input capacitance Ciss - 8900 - Output capacitance Coss - 1244 - Reverse transfer capacitance Crss - 120 - - 0.0135 0.0270 - 111 167 - 50.5 76 - 26 - - 7.8 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 20 V, VGS = 10 V, ID = 20 A Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 59 - Gate resistance Rg f = 1 MHz 0.3 0.88 1.5 - 19 38 - 10 20 100 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) VDD = 20 V, RL = 1  ID  20 A, VGEN = 10 V, Rg = 1  pF - nC  - 50 tf - 8 16 td(on) - 52 104 - 86 172 - 50 100 - 25 50 - - 94.5 - - 400 - 0.7 1.1 V - 52 104 ns - 71 142 nC - 32 - - 20 - tr td(off) VDD = 20 V, RL = 1  ID  20 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0390-Rev. A, 29-Apr-2019 Document Number: 77086 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 350 VGS = 10 V thru 4 V 80 100 VGS = 3 V 1000 210 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 280 1st line 2nd line 2nd line ID - Drain Current (A) 160 140 TC = 25 °C 100 70 40 1 2 3 4 10 0 10 0 0 TC = -55 °C TC = 125 °C VGS = 2 V 0 5 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 6 Axis Title 10000 0.0018 10000 10 000 1000 0.0012 100 VGS = 10 V 1000 100 100 Crss 0.0010 20 40 60 80 0 100 9 18 36 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1000 1st line 2nd line VDS = 10 V, 20 V, 30 V 100 2 10 0 22 44 66 88 110 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 8 6 10000 2.0 10000 4 45 Axis Title Axis Title 10 0 27 1.7 VGS = 10 V, 20 A 1000 1.4 1.1 VGS = 4.5 V, 20 A 100 0.8 10 0.5 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0390-Rev. A, 29-Apr-2019 1st line 2nd line 0 10 10 10 0.0008 2nd line VGS - Gate-to-Source Voltage (V) 1000 Coss 1st line 2nd line VGS = 4.5 V 0.0014 2nd line C - Capacitance (pF) 0.0016 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 77086 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.005 10000 100 TJ = 150 °C 1 TJ = 25 °C 100 0.1 0.004 1000 0.003 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 20 A TJ = 125 °C 0.002 100 0.001 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.5 10000 2000 0.2 ID = 5 mA -0.4 ID = 250 μA 100 -0.7 1000 1200 1st line 2nd line 1000 -0.1 2nd line P - Power (W) 1600 1st line 2nd line 2nd line VGS(th) - Variance (V) 4 800 100 400 10 -1.0 -50 -25 0 25 50 75 100 125 150 0 0.0001 10 0.001 0.01 0.1 1 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S19-0390-Rev. A, 29-Apr-2019 Document Number: 77086 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 250 10000 1000 IDM limited 150 100 100 50 ID limited 100 μs 1000 1 ms 10 10 ms Limited by RDS(on) b 1 100 ms 1s TA = 25 °C, single pulse 10 0 25 50 75 100 125 BVDSS limited 0.1 1 10 100 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V) Current Derating a Safe Operating Area Axis Title Axis Title 10000 125 10000 3.0 2.4 1st line 2nd line 50 100 25 1000 1.8 1st line 2nd line 1000 75 2nd line P - Power (W) 100 2nd line P - Power (W) DC 10 0.01 0.01 150 100 10 s 0.1 0 1st line 2nd line 1000 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) 200 1.2 100 0.6 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Notes a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit b. VGS > minimum VGS at which RDS(on) is specified S19-0390-Rev. A, 29-Apr-2019 Document Number: 77086 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77086. S19-0390-Rev. A, 29-Apr-2019 Document Number: 77086 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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