SIF912EDZ-T1-E3

SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET® Power MOSFET: 2.5 V Rated • ESD Protected: 3000 V RoHS COMPLIANT APPLICATIONS • Battery Protection Circuitry • 1-Cell Li-Ion Battery Pack - LiB/LiP - Lithium-Polymer PowerPAK® 2 x 5 1 2 S1 S1 3 D1 D2 G1 2.6 kΩ S2 5 S2 4 G2 2.6 kΩ G1 6 G2 Marking Code MCXYZ MC: Part # Code XYZ: Lot Traceability and Date Code S1 Ordering Information: SiF912EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current (VGS = 8 V, 10 µs) IS TA = 25 °C TA = 85 °C PD 7.4 7.7 5.3 80 2.9 1.3 3.5 1.6 1.8 0.86 TJ, Tstg Operating Junction and Storage Temperature Range V 10.7 IDM Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 30 36 61 76 4.5 5.6 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72952 S-82350-Rev. D, 22-Sep-08 www.vishay.com 1 SiF912EDZ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.6 Typ. Max. Unit 1.5 V Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS a Drain-Source On-State Resistancea Forward Transconductance Diode Forward Voltage a ± 500 VDS = 30 V, VGS = 0 V 1 µA 5 VDS = 5 V, VGS = 4.5 V RDS(on) a ± 10 VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V, TJ = 85 °C ID(on) On-State Drain Current VDS = 0 V, VGS = ± 4.5 V 40 A VGS = 4.5 V, ID = 7.4 A 0.0155 0.019 VGS = 4.0 V, ID = 7.3 A 0.016 0.0195 VGS = 3.1 V, ID = 6.8 A 0.018 0.022 0.027 VGS = 2.5 V, ID = 3.5 A 0.022 gfs VDS = 10 V, ID = 7.4 A 37 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 9.8 15 VDS = 15 V, VGS = 4.5 V, ID = 7.4 A 2.5 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) 0.53 0.8 0.70 1.1 8.0 12 3.4 5 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 16 100 000 1000 12 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10 000 8 4 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0 2 4 6 8 10 12 14 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage www.vishay.com 2 16 0 3 6 9 12 52 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 72952 S-82350-Rev. D, 22-Sep-08 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 thru 3 V 35 35 30 I D - Drain Current (A) I D - Drain Current (A) 30 2.5 V 25 20 15 25 20 15 TC = 125 °C 10 10 2V 25 °C 5 5 0 0.0 0 0 1 2 3 4 5 0.5 Output Characteristics 2.5 3.0 10 12 0.04 VGS = 2.5 V 0.03 VGS = 3 V VGS = 4 V 0.02 VGS = 4.5 V 0.01 V GS - Gate-to-Source Voltage (V) 5 0.05 0.00 VDS = 15 V ID = 7.4 A 4 3 2 1 0 0 5 10 15 20 25 30 35 40 0 2 4 ID - Drain Current (A) 6 8 Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 1.6 50 VGS = 4.5 V ID = 7.4 A I S - Source Current (A) 1.4 (Normalized) 2.0 Transfer Characteristics 0.06 R DS(on) - On-Resistance 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 1.0 - 55 °C 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72952 S-82350-Rev. D, 22-Sep-08 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 3 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.06 0.4 ID = 250 µA 0.2 ID = 5 A V GS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.05 0.04 ID = 7.4 A 0.03 0.02 0.0 - 0.2 - 0.4 0.01 0.00 0 1 2 3 4 - 0.6 - 50 5 - 25 0 25 VGS - Gate-to-Source Voltage (V) 50 75 100 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage IDM Limited (VGS = 8 V, < 10 µs) 100 50 IDM Limited (VGS = 4.5 V, < 300 µs) Limited by RDS(on)* 40 100 µs I D - Drain Current (A) 10 Power (W) 125 30 20 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 10 TA = 25 °C Single Pulse 0 0.001 0.01 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient 1000 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 61 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72952 S-82350-Rev. D, 22-Sep-08 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72952. Document Number: 72952 S-82350-Rev. D, 22-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1