SIF912EDZ

SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.019 @ VGS = 4.5 V 30 0.0195 @ VGS = 4.0 V 0.022 @ VGS = 3.1 V 0.027 @ VGS = 2.5 V FEATURES ID (A) 10.7 10.5 9.9 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated D ESD Protected: 3000 V APPLICATIONS D Battery Protection Circuitry D 1-Cell Li-Ion Battery Pack − LiB/LiP − Lithium-Polymer D1 D2 PowerPAKr 2 x 5 1 2 S1 S1 3 6 S2 5 S2 4 G2 2.6 kW G1 G1 G2 2.6 kW Marking Code MCXYZ MC: Part # Code XYZ: Lot Traceability and Date Code S1 S2 Ordering Information: SiF912EDZ-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (VGS = 8 V) Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 Steady State Unit V "12 10.7 7.7 80 2.9 3.5 1.8 −55 to 150 1.3 1.6 0.86 7.4 5.3 A W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72952 S-50131—Rev. B, 24-Jan-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 30 61 4.5 Maximum 36 76 5.6 Unit _C/W 1 SiF912EDZ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID =7.4 A Drain-Source On State Drain Source On-State Resistancea rDS(on) VGS = 4.0 V, ID = 7.3 A VGS = 3.1 V, ID = 6.8 A VGS = 2.5 V, ID = 3.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 7.4 A IS = 2.9 A, VGS = 0 V 40 0.0155 0.016 0.018 0.022 37 0.75 1.1 0.019 0.0195 0.022 0.027 S V W 0.6 1.5 "10 "500 1 5 A mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 15 V, VGS = 4.5 V, ID = 7.4 A , , 9.8 2.5 2.9 0.53 0.70 8.0 3.4 0.8 1.1 12 5 ms 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 16 Gate-Current vs. Gate-Source Voltage 100,000 10,000 Gate Current vs. Gate-Source Voltage I GSS − Gate Current (mA) I GSS − Gate Current (m A) 12 1,000 100 10 1 0.1 0.01 0.001 TJ = 25_C TJ = 150_C 8 4 0 0 2 4 6 8 10 12 14 16 VGS − Gate-to-Source Voltage (V) www.vishay.com 0.0001 0 3 6 9 12 52 VGS − Gate-to-Source Voltage (V) Document Number: 72952 S-50131—Rev. B, 24-Jan-05 2 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 30 I D − Drain Current (A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 2V 2.5 V I D − Drain Current (A) VGS = 5 thru 3 V 40 35 30 25 20 15 10 5 0 0.0 25_C −55_C 2.0 2.5 3.0 TC = 125_C Transfer Characteristics 0.5 1.0 1.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 30 35 40 ID − Drain Current (A) VGS = 4.5 V VGS = 2.5 V VGS = 3 V VGS = 4 V V GS − Gate-to-Source Voltage (V) 5 VDS = 15 V ID = 7.4 A Gate Charge r DS(on) − On-Resistance ( W ) 4 3 2 1 0 0 2 4 6 8 10 12 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 7.4 A I S − Source Current (A) 50 Source-Drain Diode Forward Voltage 1.4 rDS(on) − On-Resiistance (Normalized) TJ = 150_C 10 1.2 TJ = 25_C 1.0 0.8 0.6 −50 1 −25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V) www.vishay.com Document Number: 72952 S-50131—Rev. B, 24-Jan-05 3 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 0.06 0.05 0.04 ID = 7.4 A 0.03 0.02 0.01 0.00 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) V GS(th) Variance (V) ID = 5 A 0.4 ID = 250 mA 0.2 Threshold Voltage r DS(on) − On-Resistance ( W ) −0.0 −0.2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Single Pulse Power, Junction-to-Ambient 50 100 Safe Operating Area *rDS(on) Limited IDM Limited 40 I D − Drain Current (A) 10 P(t) = 0.0001 Power (W) 30 1 ID(on) Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 20 10 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 0 0.001 0.01 0.01 0.1 1 Time (sec) 10 100 1000 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 61_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72952 S-50131—Rev. B, 24-Jan-05 SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72952. Document Number: 72952 S-50131—Rev. B, 24-Jan-05 www.vishay.com 5