SiHF080N60E
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Vishay Siliconix
E Series Power MOSFET
FEATURES
D
TO-220 FULLPAK
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
G
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
G D S
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
PRODUCT SUMMARY
• Switch mode power supplies (SMPS)
VDS (V) at TJ max.
RDS(on) typ. (Ω) at 25 °C
650
VGS = 10 V
Qg max. (nC)
63
Qgs (nC)
19
Qgd (nC)
10
Configuration
• Power factor correction power supplies (PFC)
0.070
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Single
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
ORDERING INFORMATION
Package
TO-220 FULLPAK
Lead (Pb)-free and halogen-free
SIHF080N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
600
Gate-source voltage
VGS
± 30
Continuous drain current (TJ = 150 °C) e
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
IDM
Linear derating factor
Single pulse avalanche energy b
EAS
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
TJ = 125 °C
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
For 10 s
Mounting torque, M3 screw
UNIT
V
14
9
A
96
0.28
W/°C
226
mJ
PD
35
W
TJ, Tstg
-55 to +150
°C
dv/dt
100
10
V/ns
260
°C
0.6
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A
c. 1.6 mm from case
d. ISD ≤ ID, di/dt = 100 A/μs, starting TJ = 25 °C
e. Limited by maximum junction temperature
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92378
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHF080N60E
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
65
Maximum junction-to-case (drain)
RthJC
-
3.6
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.64
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
Gate-source leakage
IGSS
Zero gate voltage drain current
IDSS
μA
-
0.070
0.080
Ω
gfs
VDS = 20 V, ID = 17 A
-
4.6
-
S
Input capacitance
Ciss
2557
-
Coss
-
105
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output capacitance
-
6
-
Effective output capacitance, energy
related a
Co(er)
-
79
-
Effective output capacitance, time
related b
Co(tr)
-
499
-
Drain-source on-state resistance
Forward transconductance a
RDS(on)
VGS = 10 V
ID = 17 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Qg
Gate-source charge
Qgs
VGS = 10 V
ID = 17 A, VDS = 480 V
-
42
63
-
19
-
Gate-drain charge
Qgd
-
10
-
Turn-on delay time
td(on)
-
31
62
VDD = 480 V, ID = 17 A,
VGS = 10 V, Rg = 9.1 Ω
-
96
144
-
37
74
-
31
62
f = 1 MHz, open drain
0.3
0.7
1.4
-
-
35
-
-
96
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current
ISM
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 17 A, VGS = 0 V
TJ = 25 °C, IF = IS = 17 A,
di/dt = 80 A/μs, VR = 25 V
S
-
-
1.2
V
-
441
882
ns
-
5.2
10.4
μC
-
21
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92378
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHF080N60E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
50
TJ = 25 °C
100
7V
25
6V
5V
0
0
5
10
15
2.5
1000
2.0
1.5
VGS = 10 V
100
1.0
0.5
10
0
10
20
-60 -40 -20 0
20 40 60 80 100 120 140 160
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
Axis Title
80
10000
10000
10 000
8V
1000
7V
40
100
20
Ciss
1000
2nd line
C - Capacitance (pF)
60
15 V
14 V
13 V
12 V
11 V
10 V
100 000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
TJ = 150 °C
1000
100
Coss
10
100
1
6V
Crss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
0.1
5V
5
10
15
10
0.01
10
0
0
1st line
2nd line
1000
8V
ID =17 A
1st line
2nd line
75
9V
RDS(on) - Drain-to-Source On-Resistance
(Normalized)
15 V
14 V
13 V
12 V
11 V
10 V
10000
3.0
10000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
100
20
0
100
200
300
400
500
600
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
10000
TJ = 25 °C
90
1000
60
TJ = 150 °C
100
30
VDS = 25.6 V
5
10
15
20
VGS - Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S21-0062-Rev. A, 01-Feb-2021
15
5000
Coss
Eoss
10
500
5
50
10
0
0
2nd line
Coss - Output Capacitance (pF)
50 000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
120
0
0
100
200
300
400
500
Eoss - Output Capacitance Stored Energy (µJ)
2nd line
Axis Title
Axis Title
600
VDS - Drain-to-Source Voltage (V)
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 92378
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHF080N60E
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Vishay Siliconix
Axis Title
Axis Title
10000
VDS = 480 V
VDS = 300 V
VDS = 120 V
12
6
100
3
1000
9
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
9
10000
15
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
12
6
100
3
0
12
24
36
10
0
10
0
48
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TC - Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
1000
10
TJ = 25 °C
100
1
VGS = 0 V
10
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.2
10000
1.1
1000
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
ISD - Reverse Drain Current (A)
100
2nd line Voltage
VDS - Drain-to-Source Breakdown
(Normalized)
Axis Title
10000
1
100
0.9
ID = 250uA
0.8
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
10
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Axis Title
10000
1000
Operation in this area
limited by RDS(on)
IDM limited
1000
Limited by RDS(on) a
10
100 µs
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms100
0.1
10 ms
TC = 25 °C,
TJ = 150 °C,
single pulse
BVDSS limited
0.01
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92378
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHF080N60E
www.vishay.com
Vishay Siliconix
Axis Title
1
10000
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.1
0.05
100
0.02
Single pulse
10
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
- VDD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
10 %
VGS
Qgd
VG
td(on)
td(off)
tr
tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
D.U.T.
Rg
+
- VDD
12 V
0.2 μF
0.3 μF
+
IAS
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92378
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHF080N60E
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Vishay Siliconix
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dv/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
di/dt
waveform
Diode recovery
dv/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92378.
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92378
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220 FULLPAK (High Voltage)
OPTION 1: FACILITY CODE = 9
A
F
G
Q1
E
D
ØR
A3
L1
3 x b2
3 x b1
Mold flash
bleeding
Q
L
Exposed Cu
3xb
2xe
C
Bottom view
MILLIMETERS
DIM.
MIN.
NOM.
A
4.60
4.70
4.80
b
0.70
0.80
0.91
b1
1.20
1.30
1.47
b2
1.10
1.20
1.30
C
0.45
0.50
0.63
D
15.80
15.87
15.97
e
MAX.
2.54 BSC
E
10.00
10.10
F
2.44
2.54
10.30
2.64
G
6.50
6.70
6.90
L
12.90
13.10
13.30
L1
3.13
3.23
3.33
Q
2.65
2.75
2.85
Q1
3.20
3.30
3.40
ØR
3.08
3.18
3.28
Notes
1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking
Revision: 08-Apr-2019
Document Number: 91359
1
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
OPTION 2: FACILITY CODE = Y
A
A1
E
ØP
n
d1
d3
D
u
L1
V
L
b3
A2
b2
c
b
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.570
4.830
0.180
0.190
A1
2.570
2.830
0.101
0.111
A2
2.510
2.850
0.099
0.112
b
0.622
0.890
0.024
0.035
b2
1.229
1.400
0.048
0.055
b3
1.229
1.400
0.048
0.055
c
0.440
0.629
0.017
0.025
D
8.650
9.800
0.341
0.386
d1
15.88
16.120
0.622
0.635
d3
12.300
12.920
0.484
0.509
E
10.360
10.630
0.408
e
2.54 BSC
0.419
0.100 BSC
L
13.200
13.730
0.520
0.541
L1
3.100
3.500
0.122
0.138
n
6.050
6.150
0.238
0.242
ØP
3.050
3.450
0.120
0.136
u
2.400
2.500
0.094
0.098
V
0.400
0.500
0.016
0.020
ECN: E19-0180-Rev. D, 08-Apr-2019
DWG: 5972
Notes
1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking
Revision: 08-Apr-2019
Document Number: 91359
2
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
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Document Number: 91000
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