SIHF30N60E

SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 15 39 Single D FEATURES 650 0.125 • • • • • • Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT TO-220 FULLPAK APPLICATIONS • • • • Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters) G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK SiHF30N60E-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C)d Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAR EAS PD TJ, Tstg TJ = 125 °C for 10 s dV/dt LIMIT 600 ± 20 30 29 18 65 2 0.25 690 37 - 55 to + 150 37 18 300c W/°C mJ W °C V/ns °C A V UNIT Linear Derating Factor Avalanche Energy (repetitive) Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dte Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A. c. 1.6 mm from case. d. Limited by maximum junction temperature. e. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S11-2091 Rev. C, 31-Oct-11 1 Document Number: 91454 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHF30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 65 3.4 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM TJ = 25 °C, IF = IS = 15 A, dI/dt = 100 A/μs, VR = 20 V MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 600 V, VGS = 0 V, TJ = 150 °C VGS = 10 V I D = 15 A VDS = 8 V, ID = 3 A 600 2.0 - 0.64 0.104 5.4 2600 138 3 85 15 39 19 32 63 36 0.63 4.0 ± 100 1 100 0.125 130 40 65 95 75 - V V/°C V nA μA  S VGS = 0 V, VDS = 100 V, f = 1.0 MHz pF VGS = 10 V ID = 15 A, VDS = 480 V nC VDD = 380 V, ID = 15 A, VGS = 10 V, Rg = 4.7  f = 1 MHz, open drain ns  - 402 7 32 29 A 65 1.3 605 15 65 V ns μC A G S TJ = 25 °C, IS = 15 A, VGS = 0 V The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. S11-2091 Rev. C, 31-Oct-11 2 Document Number: 91454 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHF30N60E www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 70 60 ID - Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 5V 0 0 5 10 15 20 25 VGS, Gate-to-Source Voltage (V) TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V TOP Vishay Siliconix 80 60 ID, Drain Current (A) TJ = 25 °C 40 TJ = 150 °C 20 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics 50 3.0 ID = 15 A VGS = 10 V 2.0 40 ID - Drain Current (A) 2.5 TOP 30 RDS(on) - On-Resistance (Normalized) 20 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 1.5 1.0 10 TJ = 150 °C 0.5 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature S11-2091 Rev. C, 31-Oct-11 3 Document Number: 91454 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHF30N60E www.vishay.com Vishay Siliconix 1000 10 000 Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd Coss Operation in this area limited by RDS(on) C - Capacitance (pF) ID, Drain Current (A) 1000 100 100 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 10 ms 10 Crss 1 0 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) 1 10 100 1000 10 000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 30.0 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 24 ID = 15 A VGS - Gate-to-Source Voltage (V) 20 VDS = 120 V 16 VDS = 480 V ID, Drain Current (A) 20.0 VDS = 300 V 25.0 12 15.0 8 10.0 4 5.0 0 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TC - Temperature (°C) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 1000 Fig. 9 - Maximum Drain Current vs. Case Temperature 725 700 675 650 625 600 575 550 - 60 - 40 - 20 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDS, Drain-to-Source Breakdown Voltage (V) 100 IS - Source Current (A) 0 20 40 60 80 100 120 140 160 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 10 - Temperature vs. Drain-to-Source Voltage S11-2091 Rev. C, 31-Oct-11 4 Document Number: 91454 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHF30N60E www.vishay.com Vishay Siliconix 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VDS VGS RG RD VDS tp VDD + - VDD D.U.T. VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 15 - Unclamped Inductive Waveforms Fig. 12 - Switching Time Test Circuit VDS 90 % 10 V QGS 10 % VGS td(on) tr td(off) tf QG QGD VG Fig. 13 - Switching Time Waveforms Charge Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS RG VDS D.U.T IAS + - V DD 12 V 50 kΩ 0.2 µF 0.3 µF 10 V tp 0.01 Ω VGS 3 mA + D.U.T. - VDS Fig. 14 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S11-2091 Rev. C, 31-Oct-11 Document Number: 91454 5 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHF30N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer D.U.T. + - - + Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices ISD Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91454. S11-2091 Rev. C, 31-Oct-11 6 Document Number: 91454 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-220 FULLPAK (HIGH VOLTAGE) E n ØP A A1 d1 d3 D u L1 V L b3 b2 b e c A2 MILLIMETERS DIM. A A1 A2 b b2 b3 c D d1 d3 E e L L1 n ØP u v ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 MIN. 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 2.54 BSC 13.200 3.100 6.050 3.050 2.400 0.400 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 MAX. 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 MIN. 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 INCHES MAX. 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 0.100 BSC 0.541 0.138 0.242 0.136 0.098 0.020 Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet Cpk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. Document Number: 91359 Revision: 26-Oct-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1