SIHS36N50D-GE3

SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Super-247 S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) APPLICATIONS 550 VGS = 10 V Qg max. (nC) 0.130 Qgs (nC) 23 Qgd (nC) 37 Configuration • Consumer electronics - Displays (LCD or Plasma TV • Server and telecom power supplies - SMPS • Industrial - Welding, induction heating, motor drives • Battery chargers 125 Single ORDERING INFORMATION Package Super-247 Lead (Pb)-free and halogen-free SiHS36N50D-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage LIMIT VDS 500 VGS Gate-source voltage AC (f > 1 Hz) Continuous drain current (TJ = 150 °C) SYMBOL VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dV/dt d Soldering recommendations (peak temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 17 A c. 1.6 mm from case d. ISD ≤ ID, starting TJ = 25 °C S21-0019-Rev. B, 18-Jan-2021 V 30 36 23 A IDM 112 3.6 W/°C EAS 332 mJ Linear derating factor Single pulse avalanche energy b ± 30 UNIT PD 446 W TJ, Tstg - 55 to + 150 °C dV/dt 24 0.1 300 c V/ns °C Document Number: 91514 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHS36N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 40 Maximum junction-to-case (drain) RthJC - 0.28 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate threshold voltage (N) Gate-source leakage Zero gate voltage drain current VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 250 μA - 0.52 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V nA VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 IGSS IDSS μA - 0.105 0.130 Ω gfs VDS = 50 V, ID = 18 A - 12.8 - S Input capacitance Ciss 3233 - Coss - 285 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 25 - Effective output capacitance, energy related a Co(er) - 240 - Effective output capacitance, time related b Co(tr) - 352 - Qg - 83 125 - 23 - - 37 - Drain-source on-state resistance Forward transconductance a RDS(on) VGS = 10 V ID = 18 A Dynamic Total gate charge pF VGS = 0 V, VDS = 0 V to 400 V VGS = 10 V Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) - 33 66 tr VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 9.1 Ω - 89 134 - 79 119 - 68 102 f = 1 MHz, open drain - 1.8 - - - 36 - - 144 - - 1.2 - 490 - ns - 8.2 - μC - 31 - A Rise time Turn-off delay time td(off) Fall time tf Gate input resistance Rg ID = 18 A, VDS = 400 V nC ns Ω Drain-source body diode characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 18 A, VGS = 0 V TJ = 25 °C, IF = IS = 18 A, dI/dt = 100 A/μs, VR = 20 V V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHS36N50D www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 90 3 TJ = 25 °C ID = 18 A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 120 60 30 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 0 - 60 - 40 - 20 0 30 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V Ciss Capacitance (pF) 60 TJ = 150 °C 40 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1000 Coss 100 Crss 10 20 1 0 0 5 10 15 20 25 0 30 VDS, Drain-to-Source Voltage (V) 100 200 400 500 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 120 VGS, Gate-to-Source Voltage (V) 24 TJ = 25 °C 90 60 300 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics ID, Drain-to-Source Current (A) 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) 80 ID, Drain-to-Source Current (A) VGS = 10 V TJ = 150 °C 30 VDSS = 400 V VDS = 250 V VDSS = 100 V 20 16 12 8 4 0 0 0 5 10 15 20 25 0 30 60 90 120 150 VGS, Gate-to-Source Voltage (V) Qg, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHS36N50D www.vishay.com Vishay Siliconix 40 ID, Drain Current (A) ISD, Reverse Drain Current (A) 1000 ġ 100 ġ TJ = 150 °C ġ 10 TJ = 25 °Cġġ ġ 1 30 20 10 VGS = 0 Vġ ġ 0.1 ġ 0.2 0 0.4 0.6 0.8 1 1.2 1.4 1.6 25 VSD, Source-Drain Voltage (V) 75 100 125 150 TJ, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 1000 625 VDS, Drain-to-Source Breakdown Voltage (V) IDM = Limited Operation in this Area Limited by RDS(on) 100 ID, Drain Current (A) 50 Limited by RDS(on)* 10 100 μs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 600 575 550 525 500 BVDSS Limited 0.1 475 1 10 100 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s 1000 - 60 - 40 - 20 0 Fig. 8 - Maximum Safe Operating Area Normalized Effective Transient Thermal Impedance 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 10 - Temperature vs. Drain-to-Source Voltage 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHS36N50D www.vishay.com Vishay Siliconix RD V DS QG 10 V V GS D.U.T. RG QGS + - V DD QGD VG 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 90 % 50 kΩ 12 V 0.2 μF 0.3 μF + 10 % V GS D.U.T. td(on) td(off) tr tf - VDS VGS 3 mA Fig. 13 - Switching Time Waveforms IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit L Vary t p to obtain required IAS VDS D.U.T. RG + - I AS V DD 10 V 0.01 Ω tp Fig. 14 - Unclamped Inductive Test Circuit V DS tp V DD V DS IAS Fig. 15 - Unclamped Inductive Waveforms S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHS36N50D www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91514. S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-274AA (High Voltage) VERSION 1: FACILITY CODE = Y B A E E4 A D2 E1 A1 R D1 D L1 L Detail “A” C b e A2 0.10 (0.25) M B A M 10° b4 b2 Lead Tip 5° Detail “A” Scale: 2:1 MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634 A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051 A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634 13.30 13.90 0.524 0.547 b 1.30 1.60 0.051 0.063 E1 b2 1.80 2.20 0.071 0.087 e 5.45 BSC MAX. 0.215 BSC b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579 c (1) 0.38 0.89 0.015 0.035 L1 1.00 1.60 0.039 0.063 D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118 Notes • Dimensioning and tolerancing per ASME Y14.5M-1994 • Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body • Outline conforms to JEDEC® outline to TO-274AA (1) Dimension measured at tip of lead Revision: 19-Oct-2020 Document Number: 91365 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N A E A E3 B D D1 D2 E2 Q A2 L1 F F H H C G L G A1 e b 3x 0.25 M B A M b1 C b3 E4 E1 b’, b2, b4 C C’ Base metal b, b1, b3 Plating SECTION "F-F", "G-G" AND "H-H" SCALE: NONE MILLIMETERS MILLIMETERS DIM. MIN. MAX. DIM. MIN. MAX. A 4.83 5.21 D1 16.25 17.65 A1 2.29 2.54 D2 0.50 0.80 A2 1.91 2.16 E 15.75 16.13 b’ 1.07 1.28 E1 13.10 14.15 b 1.07 1.33 E2 3.68 5.10 b1 1.91 2.41 E3 1.00 1.90 b2 1.91 2.16 E4 12.38 13.43 b3 2.87 3.38 e b4 2.87 3.13 N c’ 0.55 0.65 L 19.81 c 0.55 0.68 L1 3.70 4.00 D 20.80 21.10 Q 5.49 6.00 5.44 BSC 3 20.32 ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975 Notes • Dimensioning and tolerancing per ASME Y14.5M-1994 • Outline conforms to JEDEC® outline to TO-274AD • Dimensions are measured in mm, angles are in degree • Metal surfaces are tin plated, except area of cut Revision: 19-Oct-2020 Document Number: 91365 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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