SIR800ADP-T1-RE3

SiR800ADP www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested 6. 15 m m 1 5 5.1 mm Top View 4 G Bottom View 3 S 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS • Synchronous rectification • High power density DC/DC PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration D • Synchronous buck converter 20 0.00135 0.00175 0.00460 18.2 177 g Single G • Load switching S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiR800ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 20 +12 / -8 177 142 50.2 b, c 40.2 b, c 150 56.8 4.5 b, c 20 20 62.5 40 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 20 25 Maximum junction-to-ambient b °C/W Maximum junction-to-case (drain) Steady state RthJC 1.7 2 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W g. TC = 25 °C S18-0652-Rev. A, 02-Jul-2018 Document Number: 79335 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR800ADP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - VDS/TJ ID = 10 mA - 18 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -3.6 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-source leakage IGSS VDS = 0 V, VGS = +12 / -8 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 15 ID(on) VDS  10 V, VGS = 10 V 40 - - VGS = 10 V, ID = 10 A - 0.00112 0.00135 RDS(on) VGS = 4.5 V, ID = 10 A - 0.00145 0.00175 VGS = 2.5 V, ID = 10 A - 0.00350 0.00460 VDS = 15 V, ID = 10 A - 60 - - 3415 - - 1290 - - 72 - - 35.2 53 - 18.2 27.5 VDS = 10 V, VGS = 4.5 V, ID = 10 A - 7.3 - - 3.6 - f = 1 MHz 0.4 0.85 1.4 - 20 40 - 13 26 - 40 80 gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A td(on) tr td(off) VDD = 10 V, RL = 1 , ID  10 A, VGEN = 10 V, Rg = 1  tf - 10 20 td(on) - 12 24 - 5 10 - 34 68 - 6 10 tr td(off) VDD = 10 V, RL = 1 , ID  10 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 56.8 - - 150 - 0.73 1.1 V - 32 64 ns - 21 42 nC - 16 - - 16 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0652-Rev. A, 02-Jul-2018 Document Number: 79335 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR800ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 150 100 VGS = 10 V thru 3 V 120 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 80 60 40 VGS = 2 V 20 90 60 TC = 25 °C TC = 125 °C 30 VGS = 1 V 0 0 0.5 1 1.5 2 TC = -55 °C 0 0 2.5 0.8 1.6 2.4 3.2 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 4 Axis Title 0.010 10 000 10000 10000 VGS = 2.5 V 0.004 100 Coss 1000 1000 1st line 2nd line 1000 0.006 2nd line C - Capacitance (pF) 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Crss 100 100 VGS = 10 V, 4.5 V 0.002 0 10 10 0 18 36 54 72 90 10 0 4 8 16 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 1000 1st line 2nd line 6 VDS = 5 V, 10 V, 15 V 100 2 0 10 0 8 16 24 32 40 10000 1.5 VGS = 4.5 V, ID = 10 A 1000 1.3 1st line 2nd line ID = 10 A 8 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 20 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 12 1.1 VGS = 10 V, ID = 10 A 0.9 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0652-Rev. A, 02-Jul-2018 100 Document Number: 79335 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR800ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.2 1000 TJ = 150 °C 1 TJ = 25 °C 100 -0.4 100 0.1 -0.7 0.01 0.2 0.4 0.6 0.8 ID = 250 μA -1.0 10 0 10 -50 1.0 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.005 ID = 10 A 0.004 10000 150 10000 120 1000 2nd line Power (W) 1000 TJ = 150 °C 0.002 90 1st line 2nd line 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 ID = 5 mA -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 10 1st line 2nd line 2nd line IS - Source Current (A) 0.5 10000 100 60 100 100 0.001 30 TJ = 25 °C 0 10 0 2 4 6 8 0 0.001 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 100 μs 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms Limited by RDS(on) (1) 10 ms 1 100 ms 100 1s 10 s 0.1 DC TA = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0652-Rev. A, 02-Jul-2018 Document Number: 79335 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR800ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 200 10000 1000 120 1st line 2nd line 2nd line ID - Drain Current (A) 160 80 100 40 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 75 10000 2.5 60 10000 2 1.5 1st line 2nd line 30 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 45 1 100 15 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0652-Rev. A, 02-Jul-2018 Document Number: 79335 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR800ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 70 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA 0.001 0.01 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 0.1 0.05 1000 0.02 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79335. S18-0652-Rev. A, 02-Jul-2018 Document Number: 79335 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000